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US07943290B2 Method of forming fine pattern using azobenzene-functionalized polymer and method of manufacturing nitride-based semiconductor light emitting device using the method of forming fine pattern 失效
使用偶氮苯官能化聚合物形成精细图案的方法和使用形成精细图案的方法制造氮化物基半导体发光器件的方法

Method of forming fine pattern using azobenzene-functionalized polymer and method of manufacturing nitride-based semiconductor light emitting device using the method of forming fine pattern
Abstract:
Provided is a method of forming a fine pattern having a pattern dimension of 1 μm or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.
Abstract(Chinese):

提供一种以重复性重复地形成图案尺寸为1μm以下的精细图案的方法。 形成微细图案的方法包括：在蚀刻层上形成偶氮苯官能化聚合物膜; 使用干涉激光束照射偶氮苯官能化的聚合物膜，通过偶氮苯官能化聚合物的光物理传输形成具有精细图案化表面起伏光栅的图案化偶氮苯官能化聚合物膜; 使用具有表面起弧光栅图案的偶氮苯官能化聚合物膜作为蚀刻掩模蚀刻蚀刻层; 并除去图案化的偶氮苯官能化聚合物膜。

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