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    Method of forming fine pattern using azobenzene-functionalized polymer and method of manufacturing nitride-based semiconductor light emitting device using the method of forming fine pattern
    1.
    发明授权
    Method of forming fine pattern using azobenzene-functionalized polymer and method of manufacturing nitride-based semiconductor light emitting device using the method of forming fine pattern 失效
    使用偶氮苯官能化聚合物形成精细图案的方法和使用形成精细图案的方法制造氮化物基半导体发光器件的方法

    公开(公告)号：US07943290B2

    公开(公告)日：2011-05-17

    申请号：US11683096

    申请日：2007-03-07

    申请人： Jae-hee Cho ,  Cheol-soo Sone ,  Dong-yu Kim ,  Hyun-gi Hong ,  Seok-soon Kim

    发明人： Jae-hee Cho ,  Cheol-soo Sone ,  Dong-yu Kim ,  Hyun-gi Hong ,  Seok-soon Kim

    IPC分类号： G03F7/26

    CPC分类号： G03F7/36 ,  G03F7/004 ,  H01L33/22 ,  H01L33/42

    摘要： Provided is a method of forming a fine pattern having a pattern dimension of 1 μm or less, repeatedly with reproducibility. The method of forming the fine pattern includes: forming an azobenzene-functionalized polymer film on an etched layer; irradiating the azobenzene-functionalized polymer film using an interference laser beam to form a patterned azobenzene-functionalized polymer film having fine-patterned surface relief gratings by a photophysical mass transporting of the azobenzene-functionalized polymer; etching the etched layer using the azobenzene-functionalized polymer film having the surface relief grating patterns as an etching mask; and removing the patterned azobenzene-functionalized polymer film.

    摘要翻译： 提供一种以重复性重复地形成图案尺寸为1μm以下的精细图案的方法。 形成微细图案的方法包括：在蚀刻层上形成偶氮苯官能化聚合物膜; 使用干涉激光束照射偶氮苯官能化的聚合物膜，通过偶氮苯官能化聚合物的光物理传输形成具有精细图案化表面起伏光栅的图案化偶氮苯官能化聚合物膜; 使用具有表面起弧光栅图案的偶氮苯官能化聚合物膜作为蚀刻掩模蚀刻蚀刻层; 并除去图案化的偶氮苯官能化聚合物膜。

    Method of manufacturing nitride-based semiconductor light emitting device
    2.
    发明授权
    Method of manufacturing nitride-based semiconductor light emitting device 有权
    氮化物系半导体发光元件的制造方法

    公开(公告)号：US07531465B2

    公开(公告)日：2009-05-12

    申请号：US11690504

    申请日：2007-03-23

    申请人： Jae-hee Cho ,  Cheol-soo Sone ,  Dong-yu Kim ,  Hyun-gi Hong ,  Seok-soon Kim

    发明人： Jae-hee Cho ,  Cheol-soo Sone ,  Dong-yu Kim ,  Hyun-gi Hong ,  Seok-soon Kim

    IPC分类号： H01L21/31

    CPC分类号： H01L33/22 ,  H01L33/0095 ,  H01L33/42

    摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode includes: forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer; forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film; forming a photonic crystal layer using a metal oxide on a recessed gap of the azobenzene-functionalized polymer film, and removing the azobenzene-functionalized polymer film.

    摘要翻译： 提供一种制造具有提高光学提取效率的改进结构的氮化物类半导体发光器件的方法。 包括n掺杂半导体层，有源层，p掺杂半导体层，n电极和p电极的氮化物系半导体发光元件的制造方法包括：形成偶氮苯官能化的聚合物膜 通过从由n掺杂半导体层，p掺杂半导体层，n电极和p电极组成的组中选择一层作为基底层，在基底层上; 通过将干涉激光束照射到偶氮苯官能化聚合物膜上，形成由偶氮苯官能化聚合物的光物理质量传递性质引起的微图案的表面起伏光栅; 在偶氮苯官能化聚合物膜的凹陷间隙上使用金属氧化物形成光子晶体层，并除去偶氮苯官能化的聚合物膜。

    Light emitting diodes and display apparatuses using the same
    4.
    发明授权
    Light emitting diodes and display apparatuses using the same 有权
    发光二极管及使用其的显示装置

    公开(公告)号：US07560746B2

    公开(公告)日：2009-07-14

    申请号：US11711877

    申请日：2007-02-28

    申请人： Jae-hee Cho ,  Martin Schubert ,  E. Fred Schubert ,  Jong-kyu Kim ,  Cheol-soo Sone

    发明人： Jae-hee Cho ,  Martin Schubert ,  E. Fred Schubert ,  Jong-kyu Kim ,  Cheol-soo Sone

    IPC分类号： H01L33/00

    CPC分类号： H01L33/46 ,  G02F1/133603 ,  G02F1/13362 ,  H01L33/405

    摘要： In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.

    摘要翻译： 在发光二极管中，第一半导体层供应电子，第二半导体层提供空穴。 在第一和第二半导体层之间形成有源层。 有源层接收电子和空穴，并且响应于电子和孔之间的耦合而发光。 第一反射层形成在第一半导体层的底部，第二反射层形成在第二半导体层的顶部。 从有源层发射的光朝向有源层的一侧离开。

    Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
    5.
    发明申请
    Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same 有权
    光学薄膜，具有该半导体发光器件的半导体发光器件及其制造方法

    公开(公告)号：US20080088932A1

    公开(公告)日：2008-04-17

    申请号：US11657648

    申请日：2007-01-25

    申请人： Jae-hee Cho ,  Frank Wilhelm Mont ,  Cheol-soo Sone ,  Jong-kyu Kim ,  June-o Song ,  E. Fred Schubert

    发明人： Jae-hee Cho ,  Frank Wilhelm Mont ,  Cheol-soo Sone ,  Jong-kyu Kim ,  June-o Song ,  E. Fred Schubert

    IPC分类号： G02B1/10

    CPC分类号： G02B1/113

    摘要： Provided are a highly transmissive optical thin film having an improved structure, in which, optical reflection (due to a difference in the refractive index between a semiconductor material and the air, when light is extracted from a semiconductor light emitting device into the air) may be suppressed, an optical output loss may be reduced and light transmittance efficiency may be maximized or increased, a semiconductor light emitting device having the same, and methods of fabricating the same. The optical thin film may include a first material layer having a first refractive index, a second material layer formed on the first material layer and having a second refractive index that is smaller than the first refractive index, and a graded-refractive index layer interposed or inserted between the first material layer and the second material layer and having a multi-layer structure in which refractive index distribution gradually decreases in the range between the first refractive index and the second refractive index as the refractive index distribution progresses from the first material layer toward the second material layer.

    摘要翻译： 提供了具有改进结构的高透射性光学薄膜，其中，光反射（由于半导体材料和空气之间的折射率的差异，当将光从半导体发光器件提取到空气中时）可以 可以抑制光输出损失，并且可以使透光率效率最大化或增加，具有该光输出损耗的半导体发光器件及其制造方法。 光学薄膜可以包括具有第一折射率的第一材料层，形成在第一材料层上并且具有小于第一折射率的第二折射率的第二材料层，以及插入或 插入在第一材料层和第二材料层之间，并且具有多层结构，其中折射率分布在第一折射率分布和第二折射率之间的范围内随着折射率分布从第一材料层朝向 第二材料层。

    Red phosphor and method of preparing the same, and red light emitting diode, white light emitting diode, and active dynamic liquid crystal device using the red phosphor
    8.
    发明授权
    Red phosphor and method of preparing the same, and red light emitting diode, white light emitting diode, and active dynamic liquid crystal device using the red phosphor 有权
    红色荧光粉及其制备方法，以及红色发光二极管，白色发光二极管和使用红色荧光体的有源动态液晶装置

    公开(公告)号：US07459846B2

    公开(公告)日：2008-12-02

    申请号：US10976875

    申请日：2004-11-01

    申请人： Yun-chan Kang ,  Jae-hee Cho ,  Cheol-soo Sone

    发明人： Yun-chan Kang ,  Jae-hee Cho ,  Cheol-soo Sone

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： C09K11/7783 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2924/181 ,  Y02B20/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： Provided is a red phosphor represented by formula 1: (Li(2-z)-xMx)(MoO4)y:Euz,Smq  (1) where M is an element selected from K, Mg, Na, Ca, Sr, and Ba, 0≦x≦2, 0.5≦y≦5, 0.01≦z≦1.5, and 0.001≦q≦1.0. The red phosphor has emission characteristics such as high brightness when excited by, in particular, an excitation light source of around 405 nm. The red phosphor is 6 times brighter than conventional phosphors. Furthermore, the red phosphor can be used in a red light emitting diode (LED) that has a UV excitation light source, a white LED, and an active dynamic liquid crystal device (LCD). In addition, the white LED using the red phosphor has a color rendering index of 90 or greater and so has excellent color rendition.

    摘要翻译： （Li（2-z）-xMx）（MoO4）y：Euz，Smq（式（1））表示的红色荧光体：＆lt;？in-line-formula description =“In-line Formulas”end =“lead” （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中M是选自K，Mg，Na，Ca，Sr和Ba的元素，0 <= x < = 2，0.5 <= y <= 5，0.01 <= z <= 1.5，0.001 <= q <= 1.0。 当由特别是约405nm的激发光源激发时，红色荧光体具有诸如高亮度的发射特性。 红色荧光体比常规荧光体亮6倍。 此外，红色荧光体可以用于具有UV激发光源，白色LED和有源动态液晶装置（LCD）的红色发光二极管（LED）中。 此外，使用红色荧光体的白色LED的显色指数为90以上，因此具有优异的色彩再现性。

    Light emitting diodes and display apparatuses using the same
    9.
    发明申请
    Light emitting diodes and display apparatuses using the same 有权
    发光二极管及使用其的显示装置

    公开(公告)号：US20080204626A1

    公开(公告)日：2008-08-28

    申请号：US11711877

    申请日：2007-02-28

    申请人： Jae-hee Cho ,  Martin Schubert ,  E. Fred Schubert ,  Jong-kyu Kim ,  Cheol-soo Sone

    发明人： Jae-hee Cho ,  Martin Schubert ,  E. Fred Schubert ,  Jong-kyu Kim ,  Cheol-soo Sone

    IPC分类号： G02F1/1335 ,  H01L33/00

    CPC分类号： H01L33/46 ,  G02F1/133603 ,  G02F1/13362 ,  H01L33/405

    摘要： In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.

    摘要翻译： 在发光二极管中，第一半导体层供应电子，第二半导体层提供空穴。 在第一和第二半导体层之间形成有源层。 有源层接收电子和空穴，并且响应于电子和孔之间的耦合而发光。 第一反射层形成在第一半导体层的底部，第二反射层形成在第二半导体层的顶部。 从有源层发射的光朝向有源层的一侧离开。