利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

66 条记录 (耗时 0.022 秒)

    Light-emitting device including a connection layer formed on a side surface thereof
    1.
    发明授权
    Light-emitting device including a connection layer formed on a side surface thereof 有权
    发光装置，其包括在其侧表面上形成的连接层

    公开(公告)号：US08735932B2

    公开(公告)日：2014-05-27

    申请号：US13253515

    申请日：2011-10-05

    申请人： Tae-hyung Kim ,  Cheol-soo Sone ,  Jong-in Yang ,  Sang-yeob Song ,  Si-hyuk Lee

    发明人： Tae-hyung Kim ,  Cheol-soo Sone ,  Jong-in Yang ,  Sang-yeob Song ,  Si-hyuk Lee

    IPC分类号： H01L33/36

    CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

    摘要： An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

    摘要翻译： LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并连接到各个化合物层的第一和第二电极层。 绝缘层涂覆在不同于第一和第二电极层所在的区域中。 导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。 形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。 形成在另一个侧表面上的第二电极连接层连接到第二电极层。 通过在发光装置的相应侧表面上形成连接层，可以降低制造成本。

    Polarized light emitting diode and method of forming the same
    2.
    发明授权
    Polarized light emitting diode and method of forming the same 有权
    极化发光二极管及其形成方法

    公开(公告)号：US08004000B2

    公开(公告)日：2011-08-23

    申请号：US11797003

    申请日：2007-04-30

    申请人： Bok-ki Min ,  Cheol-soo Sone

    发明人： Bok-ki Min ,  Cheol-soo Sone

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44

    摘要： Example embodiments are directed to a polarized light emitting diode and method of forming the same. The polarized light emitting diode may include a support layer, a semiconductor layer structure, and/or a polarization control layer. The semiconductor layer structure may be formed on the support layer and may include a light-emitting layer. The polarization control layer may be formed on the semiconductor layer structure and may include a plurality of metal nanowires. The polarized light emitting diode may be configured to control the polarization of emitted light. The method of forming a polarized light emitting diode may include forming on a substrate a semiconductor layer structure with a light emitting layer. A reflecting layer may be formed on the semiconductor layer structure with an attached support layer. The substrate may be removed from the semiconductor layer structure and a polarization control layer including metal nanowires may be formed on the semiconductor layer structure.

    摘要翻译： 示例性实施例涉及一种偏振发光二极管及其形成方法。 偏振发光二极管可以包括支撑层，半导体层结构和/或偏振控制层。 半导体层结构可以形成在支撑层上，并且可以包括发光层。 偏光控制层可以形成在半导体层结构上，并且可以包括多个金属纳米线。 偏振发光二极管可以被配置为控制发射光的偏振。 形成偏振发光二极管的方法可以包括在衬底上形成具有发光层的半导体层结构。 可以在具有附接的支撑层的半导体层结构上形成反射层。 可以从半导体层结构去除衬底，并且可以在半导体层结构上形成包括金属纳米线的偏振控制层。

    LED device having diffuse reflective surface
    3.
    发明授权
    LED device having diffuse reflective surface 有权
    LED装置具有漫反射面

    公开(公告)号：US07816855B2

    公开(公告)日：2010-10-19

    申请号：US11318557

    申请日：2005-12-28

    申请人： Jae-hee Cho ,  Jong-kyu Kim ,  Cheol-soo Sone ,  E. Fred Schubert

    发明人： Jae-hee Cho ,  Jong-kyu Kim ,  Cheol-soo Sone ,  E. Fred Schubert

    IPC分类号： H05B33/00

    CPC分类号： H01L33/50 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0091 ,  H01L2924/00014

    摘要： A LED device is provided having a diffuse reflective surface which includes an LED chip emitting light, a reflector cup having the LED chip arranged at a bottom surface thereof and having an angled surface which diffusely reflects the light emitted by the LED chip, and a light conversion material provided in the reflector cup for converting the light emitted by the LED chip into visible light rays. The light-conversion material is spatially separated from the LED chip by a length equal or greater than the maximum length of the LED chip.

    摘要翻译： 提供一种LED装置，其具有漫反射表面，其包括发射光的LED芯片，具有布置在其底表面处的LED芯片的反射杯，并且具有使LED芯片发射的光漫反射的倾斜表面，以及光 设置在反射杯中的用于将由LED芯片发射的光转换成可见光的转换材料。 光转换材料与LED芯片在空间上分开等于或大于LED芯片的最大长度的长度。

    Nitride-based semiconductor light-emitting device and method of manufacturing the same
    4.
    发明授权
    Nitride-based semiconductor light-emitting device and method of manufacturing the same 有权
    氮化物系半导体发光元件及其制造方法

    公开(公告)号：US07541206B2

    公开(公告)日：2009-06-02

    申请号：US11649237

    申请日：2007-01-04

    申请人： Suk-ho Yoon ,  Cheol-soo Sone ,  Jeong-wook Lee ,  Joo-sung Kim

    发明人： Suk-ho Yoon ,  Cheol-soo Sone ,  Jeong-wook Lee ,  Joo-sung Kim

    IPC分类号： H01L21/00 ,  H01L29/06

    CPC分类号： H01L33/22 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L2933/0016

    摘要： A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

    摘要翻译： 提供一种具有改善结构以提高光提取效率的氮化物基半导体发光器件及其制造方法。 该方法包括在衬底上依次形成n包覆层，有源层和p覆盖层的操作; 在所述p覆盖层的上表面上形成多个掩模点; 在所述掩模点之间的所述p覆盖层的部分上形成具有粗糙表面的p接触层; 通过干蚀刻从p接触层的上表面的一部分形成与p接触层的粗糙形状相同的粗糙形状的n包覆层的粗糙的n接触表面到期望的深度 n覆层; 在粗糙的n接触面上形成n电极; 以及在p-接触层上形成p电极。

    Method of manufacturing nitride-based semiconductor light emitting device
    5.
    发明授权
    Method of manufacturing nitride-based semiconductor light emitting device 有权
    氮化物系半导体发光元件的制造方法

    公开(公告)号：US07531465B2

    公开(公告)日：2009-05-12

    申请号：US11690504

    申请日：2007-03-23

    申请人： Jae-hee Cho ,  Cheol-soo Sone ,  Dong-yu Kim ,  Hyun-gi Hong ,  Seok-soon Kim

    发明人： Jae-hee Cho ,  Cheol-soo Sone ,  Dong-yu Kim ,  Hyun-gi Hong ,  Seok-soon Kim

    IPC分类号： H01L21/31

    CPC分类号： H01L33/22 ,  H01L33/0095 ,  H01L33/42

    摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer, an n-electrode and a p-electrode includes: forming an azobenzene-functionalized polymer film on a base layer by selecting one layer from the group consisting of the n-doped semiconductor layer, the p-doped semiconductor layer, the n-electrode and the p-electrode as the base layer; forming surface relief gratings of a micro-pattern caused by a photophysical mass transport property of azobenzene-functionalized polymer by irradiating interference laser beams onto the azobenzene-functionalized polymer film; forming a photonic crystal layer using a metal oxide on a recessed gap of the azobenzene-functionalized polymer film, and removing the azobenzene-functionalized polymer film.

    摘要翻译： 提供一种制造具有提高光学提取效率的改进结构的氮化物类半导体发光器件的方法。 包括n掺杂半导体层，有源层，p掺杂半导体层，n电极和p电极的氮化物系半导体发光元件的制造方法包括：形成偶氮苯官能化的聚合物膜 通过从由n掺杂半导体层，p掺杂半导体层，n电极和p电极组成的组中选择一层作为基底层，在基底层上; 通过将干涉激光束照射到偶氮苯官能化聚合物膜上，形成由偶氮苯官能化聚合物的光物理质量传递性质引起的微图案的表面起伏光栅; 在偶氮苯官能化聚合物膜的凹陷间隙上使用金属氧化物形成光子晶体层，并除去偶氮苯官能化的聚合物膜。

    RED PHOSPHOR AND METHOD OF PREPARING THE SAME
    6.
    发明申请
    RED PHOSPHOR AND METHOD OF PREPARING THE SAME 审中-公开
    红色磷光体及其制备方法

    公开(公告)号：US20090072196A1

    公开(公告)日：2009-03-19

    申请号：US12270171

    申请日：2008-11-13

    申请人： Jae-hee Cho ,  Yun-chan Kang ,  Cheol-soo Sone ,  Hyung-kun Kim

    发明人： Jae-hee Cho ,  Yun-chan Kang ,  Cheol-soo Sone ,  Hyung-kun Kim

    IPC分类号： C09K11/78

    CPC分类号： C09K11/7734 ,  C09K11/7739 ,  C09K11/7797 ,  H01L33/502

    摘要： Provided is a red phosphor which is excellent in emission efficiency by a long wavelength UV excitation source and has a fine and uniform particle size. The red phosphor includes a compound represented by (Li.sub.(2−z)−xM.sub.x)(AO.sub.4).sub.y:Eu.sub.z,Sm.sub.q and a flux wherein M is K, Mg, Na, Ca, Sr, or Ba, A is Mo or W, 0.ltoreq.x.ltoreq.2, 0.5.ltoreq.y.ltoreq.5, 0.01.ltoreq.z.ltoreq.1.5, and 0.001.ltoreq.q.ltoreq.1.0. Provided is also a method of preparing the red phosphor.

    摘要翻译： 提供了通过长波长UV激发源具有优异的发光效率并且具有细小且均匀的粒径的红色荧光体。 红色荧光体包括由（Li.sub.（2-z）-xM.sub.x）（AO.sub.y）：Eu，Sb，Smq表示的化合物和 助熔剂，其中M是K，Mg，Na，Ca，Sr或Ba，A是Mo或W，0.11gq.lr.q.，0.5.l.q.y.q.,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, .1.5和0.001.ltoreq.q.ltoreq.1.0。 还提供了制备红色荧光体的方法。

    LED device having diffuse reflective surface
    8.
    发明申请
    LED device having diffuse reflective surface 有权
    LED装置具有漫反射面

    公开(公告)号：US20060170335A1

    公开(公告)日：2006-08-03

    申请号：US11318557

    申请日：2005-12-28

    申请人： Jae-hee Cho ,  Jong-kyu Kim ,  Cheol-soo Sone ,  E. Schubert

    发明人： Jae-hee Cho ,  Jong-kyu Kim ,  Cheol-soo Sone ,  E. Schubert

    IPC分类号： H01J1/62

    CPC分类号： H01L33/50 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0091 ,  H01L2924/00014

    摘要： A LED device is provided having a diffuse reflective surface which includes an LED chip emitting light, a reflector cup having the LED chip arranged at a bottom surface thereof and having an angled surface which diffusely reflects the light emitted by the LED chip, and a light conversion material provided in the reflector cup for converting the light emitted by the LED chip into visible light rays. The light-conversion material is spatially separated from the LED chip by a length equal or greater than the maximum length of the LED chip.

    摘要翻译： 提供一种LED装置，其具有漫反射表面，其包括发射光的LED芯片，具有布置在其底表面处的LED芯片的反射杯，并且具有使LED芯片发射的光漫反射的倾斜表面，以及光 设置在反射杯中的用于将由LED芯片发射的光转换成可见光的转换材料。 光转换材料与LED芯片在空间上分开等于或大于LED芯片的最大长度的长度。

    Red phosphor and method of preparing the same
    9.
    发明申请
    Red phosphor and method of preparing the same 审中-公开
    红色荧光粉及其制备方法

    公开(公告)号：US20060028117A1

    公开(公告)日：2006-02-09

    申请号：US11089479

    申请日：2005-03-25

    申请人： Jae-hee Cho ,  Yun-chan Kang ,  Cheol-soo Sone ,  Hyung-kun Kim

    发明人： Jae-hee Cho ,  Yun-chan Kang ,  Cheol-soo Sone ,  Hyung-kun Kim

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： C09K11/7734 ,  C09K11/7739 ,  C09K11/7797 ,  H01L33/502

    摘要： Provided is a red phosphor which is excellent in emission efficiency by a long wavelength UV excitation source and has a fine and uniform particle size. The red phosphor includes a compound represented by (Li(2-z)-xMx)(AO4)y:Euz,Smq and a flux wherein M is K, Mg, Na, Ca, Sr, or Ba, A is Mo or W, 0≦x≦2, 0.5≦y≦5, 0.01≦z≦1.5, and 0.001≦q≦1.0. Provided is also a method of preparing the red phosphor.

    摘要翻译： 提供了通过长波长UV激发源具有优异的发光效率并且具有细小且均匀的粒径的红色荧光体。 红色荧光体包括由（Li 2（2-z）-x M x x）（AO 4）x（x） 其中M是K，Mg，Na，Ca，Sr或Ba，A是Mo或W，0 < = x <= 2，0.5 <= y <= 5,0.01 <= z <= 1.5，0.001 <= q <= 1.0。 还提供了制备红色荧光体的方法。