Invention Grant
- Patent Title: Metal interconnection of a semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体器件的金属互连及其制造方法
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Application No.: US12292827Application Date: 2008-11-26
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Publication No.: US07960273B2Publication Date: 2011-06-14
- Inventor: Kyu-Ha Lee , Cha-Je Jo , Jeong-Woo Park
- Applicant: Kyu-Ha Lee , Cha-Je Jo , Jeong-Woo Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2007-0123005 20071129
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/4763
Abstract:
A method of manufacturing a metal interconnection of a semiconductor device includes forming a base layer with at least one groove, the at least one groove having an open upper portion, forming a first metal layer in the at least one groove, forming a seed metal layer on the first metal layer in the at least one groove, the seed metal layer being only on a bottom surface of the at least one groove, and forming a metal pattern grown from the seed metal layer to fill the at least one grove.
Public/Granted literature
- US20090140429A1 Metal interconnection of a semiconductor device and method of manufacturing the same Public/Granted day:2009-06-04
Information query
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