Invention Grant
- Patent Title: Method of forming silicon chicklet pedestal
- Patent Title (中): 形成硅芯座的方法
-
Application No.: US12540487Application Date: 2009-08-13
-
Publication No.: US07987591B2Publication Date: 2011-08-02
- Inventor: S. Jay Chey , Timothy C. Krywanczyk , Mohammed S. Shaikh , Matthew T. Tiersch , Cornelia Kang-I Tsang
- Applicant: S. Jay Chey , Timothy C. Krywanczyk , Mohammed S. Shaikh , Matthew T. Tiersch , Cornelia Kang-I Tsang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01K3/10
- IPC: H01K3/10

Abstract:
A silicon chicklet pedestal for use in a wafer-level test probe of a wafer is provided and includes a main body, first and second opposing faces, and an array of vias formed through the main body to extend between the first and second faces, through which pairs of leads, respectively associated with each via at the first and second faces, are electrically connectable to one another.
Public/Granted literature
- US20110037489A1 SILICON CHICKLET PEDESTAL Public/Granted day:2011-02-17
Information query