Chemical mechanical polishing slurry and method for polishing metal/oxide layers
    7.
    发明授权
    Chemical mechanical polishing slurry and method for polishing metal/oxide layers 失效
    化学机械抛光浆料和抛光金属/氧化物层的方法

    公开(公告)号:US06294105B1

    公开(公告)日:2001-09-25

    申请号:US08997290

    申请日:1997-12-23

    IPC分类号: C09K1300

    摘要: A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.

    摘要翻译: 用于半导体衬底上的钨冶金和二氧化硅基氧化物的化学机械抛光的硝酸铁 - 氧化铝基浆料,其中在浆料中研磨材料的悬浮液和稳定性基本上是稳定的。 浆料配方是平衡的,在抛光后提供低的异物残留,并且由于其降低的硝酸铁浓度将比现有技术的浆料腐蚀性更小。 该浆料的配方包括30重量%的二氧化硅悬浮液,约800毫升40重量%的三水合九水合物和足够的70重量%的硝酸以将浆料的pH调节至约1.2至1.4。

    Chemical-mechanical-polishing slurry and method for polishing metal/oxide layers
    8.
    发明授权
    Chemical-mechanical-polishing slurry and method for polishing metal/oxide layers 有权
    化学机械抛光浆料和抛光金属/氧化物层的方法

    公开(公告)号:US06355565B2

    公开(公告)日:2002-03-12

    申请号:US09904323

    申请日:2001-07-12

    IPC分类号: H01L2100

    摘要: A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate, liters and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.

    摘要翻译: 用于半导体衬底上的钨冶金和二氧化硅基氧化物的化学机械抛光的硝酸铁 - 氧化铝基浆料,其中在浆料中研磨材料的悬浮液和稳定性基本上是稳定的。 浆料配方是平衡的,在抛光后提供低的异物残留,并且由于其降低的硝酸铁浓度将比现有技术的浆料腐蚀性更小。 浆料的配方包括30重量%二氧化硅悬浮液,约800毫升40重量%的三水合九水合物,升和足够的70重量%的硝酸以将浆料的pH调节至约1.2至1.4。

    Solution for forming polishing slurry, polishing slurry and related methods
    9.
    发明授权
    Solution for forming polishing slurry, polishing slurry and related methods 有权
    抛光浆,抛光浆及其相关方法的研究

    公开(公告)号:US07824568B2

    公开(公告)日:2010-11-02

    申请号:US11465176

    申请日:2006-08-17

    IPC分类号: C09K13/00

    CPC分类号: C09K3/1463 C09G1/02 C09G1/04

    摘要: A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.

    摘要翻译: 公开了一种用于形成抛光浆料,抛光浆料和相关方法的溶液。 用于形成抛光浆料的溶液可以包括溶解在诸如烷基硫酸钠溶液和可能的聚丙烯酸(PAA)溶液的离子表面活性剂中的1H-苯并三唑(BTA)。 该溶液可以过滤并用于抛光浆料中。 这种溶解BTA的方法导致抛光浆料中的高BTA浓度,而不会向浆料中添加外来成分或增加安全隐患。 此外,由于该溶液非常稳定(例如可以冷冻和解冻)并且与常规方法相比具有较少的体积,因此该溶液更易于运输。 此外,由于去除可能引起划伤的颗粒,抛光浆料性能大大提高。