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    Chemical mechanical polishing slurry and method for polishing metal/oxide layers
    7.
    发明授权
    Chemical mechanical polishing slurry and method for polishing metal/oxide layers 失效
    化学机械抛光浆料和抛光金属/氧化物层的方法

    公开(公告)号：US06294105B1

    公开(公告)日：2001-09-25

    申请号：US08997290

    申请日：1997-12-23

    申请人： Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

    发明人： Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

    IPC分类号： C09K1300

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/31053 ,  H01L21/3212

    摘要： A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.

    摘要翻译： 用于半导体衬底上的钨冶金和二氧化硅基氧化物的化学机械抛光的硝酸铁 - 氧化铝基浆料，其中在浆料中研磨材料的悬浮液和稳定性基本上是稳定的。 浆料配方是平衡的，在抛光后提供低的异物残留，并且由于其降低的硝酸铁浓度将比现有技术的浆料腐蚀性更小。 该浆料的配方包括30重量％的二氧化硅悬浮液，约800毫升40重量％的三水合九水合物和足够的70重量％的硝酸以将浆料的pH调节至约1.2至1.4。

    Chemical-mechanical-polishing slurry and method for polishing metal/oxide layers
    8.
    发明授权
    Chemical-mechanical-polishing slurry and method for polishing metal/oxide layers 有权
    化学机械抛光浆料和抛光金属/氧化物层的方法

    公开(公告)号：US06355565B2

    公开(公告)日：2002-03-12

    申请号：US09904323

    申请日：2001-07-12

    申请人： Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

    发明人： Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

    IPC分类号： H01L2100

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/31053 ,  H01L21/3212

    摘要： A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate, liters and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.

    摘要翻译： 用于半导体衬底上的钨冶金和二氧化硅基氧化物的化学机械抛光的硝酸铁 - 氧化铝基浆料，其中在浆料中研磨材料的悬浮液和稳定性基本上是稳定的。 浆料配方是平衡的，在抛光后提供低的异物残留，并且由于其降低的硝酸铁浓度将比现有技术的浆料腐蚀性更小。 浆料的配方包括30重量％二氧化硅悬浮液，约800毫升40重量％的三水合九水合物，升和足够的70重量％的硝酸以将浆料的pH调节至约1.2至1.4。

    Method to recover patterned semiconductor wafers for rework
    9.
    发明授权
    Method to recover patterned semiconductor wafers for rework 失效
    恢复图案化半导体晶片进行返工的方法

    公开(公告)号：US08034718B2

    公开(公告)日：2011-10-11

    申请号：US12031726

    申请日：2008-02-15

    申请人： Steven R. Codding ,  David Domina ,  James L. Hardy, Jr. ,  Timothy C. Krywanczyk

    发明人： Steven R. Codding ,  David Domina ,  James L. Hardy, Jr. ,  Timothy C. Krywanczyk

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02032

    摘要： Disclosed are embodiments of a method of removing patterned circuit structures from the surface of a semiconductor wafer. The method embodiments comprise blasting the surface of the semiconductor wafer with particles so as to remove substantially all of the patterned circuit structures. The blasting process is followed by one or more grinding, polishing and/or cleaning processes to remove any remaining circuit structures, to remove any lattice damage and/or to achieve a desired smoothness across the surface of the semiconductor wafer.

    摘要翻译： 公开了从半导体晶片的表面去除图案化电路结构的方法的实施例。 方法实施例包括用颗粒喷射半导体晶片的表面，以便基本上除去所有图案化的电路结构。 喷砂过程之后是一次或多次研磨，抛光和/或清洁工艺，以除去任何剩余的电路结构，去除任何晶格损伤和/或在半导体晶片的表面上实现期望的平滑度。

    Semiconductor wafer front side protection
    10.
    发明授权
    Semiconductor wafer front side protection 失效
    半导体晶圆正面保护

    公开(公告)号：US07001827B2

    公开(公告)日：2006-02-21

    申请号：US10413698

    申请日：2003-04-15

    申请人： Allan D. Abrams ,  Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Rene A. Lamothe ,  Ivan J. Stone ,  Matthew R. Whalen

    发明人： Allan D. Abrams ,  Donald W. Brouillette ,  Joseph D. Danaher ,  Timothy C. Krywanczyk ,  Rene A. Lamothe ,  Ivan J. Stone ,  Matthew R. Whalen

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/304 ,  H01L2221/6834

    摘要： There is provided a method for making a wafer including the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.

    摘要翻译： 提供了一种用于制造晶片的方法，包括以下步骤：提供具有第一表面，相对的第二表面的基底和限定基底的厚度的至少一个侧边缘，所述至少一个侧边缘具有第一周边区域 以及与第一周边区域相邻的第二周边区域。 该方法包括将流体施加到至少一个侧边缘的第一表面和第一周边区域，并且移除至少一个侧边缘的相对的第二表面和第二周边区域以形成第三表面。 还提供了由制造晶片的方法制成的半导体芯片。