发明授权
- 专利标题： Semiconductor device and manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件及半导体器件的制造方法
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申请号： US12854060申请日： 2010-08-10
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公开(公告)号： US08039353B2公开(公告)日： 2011-10-18
- 发明人: Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Eiji Sugiyama , Kaori Ogita , Naoto Kusumoto
- 申请人： Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Eiji Sugiyama , Kaori Ogita , Naoto Kusumoto
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2006-175611 20060626
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/033 ; H01L21/78
摘要：
The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.
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