公开(公告)号：US08432018B2

公开(公告)日：2013-04-30

申请号：US13271469

申请日：2011-10-12

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L29/06

CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.

摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。

公开(公告)号：US20070296037A1

公开(公告)日：2007-12-27

申请号：US11812813

申请日：2007-06-21

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。 此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

公开(公告)号：US08039353B2

公开(公告)日：2011-10-18

申请号：US12854060

申请日：2010-08-10

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/78

CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。 此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

公开(公告)号：US07851886B2

公开(公告)日：2010-12-14

申请号：US11812813

申请日：2007-06-21

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L29/06

CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。 此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

公开(公告)号：US07772675B2

公开(公告)日：2010-08-10

申请号：US11812813

申请日：2007-06-21

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L29/06

摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

公开(公告)号：US08508027B2

公开(公告)日：2013-08-13

申请号：US12555832

申请日：2009-09-09

申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Kyosuke Ito ,  Eiji Sugiyama ,  Yoshitaka Dozen

发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Kyosuke Ito ,  Eiji Sugiyama ,  Yoshitaka Dozen

IPC分类号： H01L23/552

CPC分类号： H01L23/66 ,  H01L23/49855 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.

公开(公告)号：US07816685B2

公开(公告)日：2010-10-19

申请号：US12342446

申请日：2008-12-23

申请人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

发明人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

IPC分类号： H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2924/00

摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

摘要翻译： 本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。 包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体 电极。 导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。 用激光照射导电膜。

公开(公告)号：US07485511B2

公开(公告)日：2009-02-03

申请号：US11440128

申请日：2006-05-25

申请人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

发明人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

IPC分类号： H01L21/84

CPC分类号： H01L27/1266 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2924/00

摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

摘要翻译： 本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。 包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体 电极。 导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。 用激光照射导电膜。

公开(公告)号：US08120034B2

公开(公告)日：2012-02-21

申请号：US12902642

申请日：2010-10-12

申请人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

发明人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

IPC分类号： H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2924/00

摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

摘要翻译： 本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。 包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体 电极。 导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。 用激光照射导电膜。

公开(公告)号：US20090321902A1

公开(公告)日：2009-12-31

申请号：US12555832

申请日：2009-09-09

申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Kyosuke Ito ,  Eiji Sugiyama ,  Yoshitaka Dozen

发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Kyosuke Ito ,  Eiji Sugiyama ,  Yoshitaka Dozen

IPC分类号： H01L23/552

CPC分类号： H01L23/66 ,  H01L23/49855 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.

摘要翻译： 本发明的半导体器件包括晶体管，设置在晶体管上的绝缘层，通过开口部分电连接到晶体管的源极区域或漏极区域的第一导电层（对应于源极线或漏极线） 设置在所述绝缘层中的第一树脂层，设置在所述绝缘层和所述第一导电层上的第一树脂层，包含通过设置在所述第一树脂层中的开口部与所述第一导电层电连接的导电粒子的层和设置在所述第一树脂层上的基板 具有第二树脂层和用作天线的第二导电层。 在具有上述结构的半导体器件中，第二导电层与第一导电层电连接，其间含有导电粒子的层。 此外，第二树脂层设置在第一树脂层上。