发明授权
- 专利标题： In-situ formed capping layer in MTJ devices
- 专利标题（中）： MTJ装置中原位形成的覆盖层
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申请号： US12756743申请日： 2010-04-08
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公开(公告)号： US08143683B2公开(公告)日： 2012-03-27
- 发明人: Yung-Hung Wang , Yu-Jen Wang , Mark Juang , Chia-Shiung Tsai
- 申请人： Yung-Hung Wang , Yu-Jen Wang , Mark Juang , Chia-Shiung Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.
公开/授权文献
- US20100193891A1 In-Situ Formed Capping Layer in MTJ Devices 公开/授权日：2010-08-05