Invention Grant
- Patent Title: In-situ formed capping layer in MTJ devices
- Patent Title (中): MTJ装置中原位形成的覆盖层
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Application No.: US12756743Application Date: 2010-04-08
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Publication No.: US08143683B2Publication Date: 2012-03-27
- Inventor: Yung-Hung Wang , Yu-Jen Wang , Mark Juang , Chia-Shiung Tsai
- Applicant: Yung-Hung Wang , Yu-Jen Wang , Mark Juang , Chia-Shiung Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.
Public/Granted literature
- US20100193891A1 In-Situ Formed Capping Layer in MTJ Devices Public/Granted day:2010-08-05
Information query
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