Invention Grant
US08148707B2 Ovonic threshold switch film composition for TSLAGS material
有权
用于TSLAGS材料的Ovonic阈值开关膜组成
- Patent Title: Ovonic threshold switch film composition for TSLAGS material
- Patent Title (中): 用于TSLAGS材料的Ovonic阈值开关膜组成
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Application No.: US12637644Application Date: 2009-12-14
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Publication No.: US08148707B2Publication Date: 2012-04-03
- Inventor: Stanford Ovshinsky , Tyler Lowrey , James D. Reed , Semyon D. Savransky , Jason S. Reid , Kuo-Wei Chang
- Applicant: Stanford Ovshinsky , Tyler Lowrey , James D. Reed , Semyon D. Savransky , Jason S. Reid , Kuo-Wei Chang
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/18 ; H01L45/00
Abstract:
A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.
Public/Granted literature
- US20100163822A1 OVONIC THRESHOLD SWITCH FILM COMPOSITION FOR TSLAGS MATERIAL Public/Granted day:2010-07-01
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