Invention Grant
- Patent Title: Composite focused ion beam device, and processing observation method and processing method using the same
- Patent Title (中): 复合聚焦离子束装置及其加工方法及处理方法
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Application No.: US12733089Application Date: 2008-08-06
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Publication No.: US08269194B2Publication Date: 2012-09-18
- Inventor: Takashi Kaito , Junichi Tashiro , Yasuhiko Sugiyama , Kouji Iwasaki , Toshiaki Fujii , Kazuo Aita , Takashi Ogawa
- Applicant: Takashi Kaito , Junichi Tashiro , Yasuhiko Sugiyama , Kouji Iwasaki , Toshiaki Fujii , Kazuo Aita , Takashi Ogawa
- Applicant Address: JP
- Assignee: SII NanoTechnology Inc.
- Current Assignee: SII NanoTechnology Inc.
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2007-207097 20070808
- International Application: PCT/JP2008/064122 WO 20080806
- International Announcement: WO2009/020150 WO 20090212
- Main IPC: H01J49/00
- IPC: H01J49/00

Abstract:
A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a liquid metal ion source that generates first ions for forming the first ion beam. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. The first ion beam irradiated by the first ion beam irradiation system has a first beam diameter and the second ion beam irradiated by the second ion beam irradiation system has a second beam diameter smaller than the first beam diameter. The first and second ion beam irradiation systems are disposed relative to the sample stage so that axes of the first and second ion beams are orthogonal to a tilt axis of the sample stage.
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