发明授权
- 专利标题: Device performance parmeter tuning method and system
- 专利标题(中): 设备性能参数调节方法和系统
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申请号: US13048282申请日: 2011-03-15
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公开(公告)号: US08452439B2公开(公告)日: 2013-05-28
- 发明人: Sunny Wu , Chun-Hsien Lin , Kun-Ming Chen , Dung-Yian Hsieh , Hui-Ru Lin , Jo Fei Wang , Jong-I Mou , I-Ching Chu
- 申请人: Sunny Wu , Chun-Hsien Lin , Kun-Ming Chen , Dung-Yian Hsieh , Hui-Ru Lin , Jo Fei Wang , Jong-I Mou , I-Ching Chu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 代理商 Steven E. Koffs
- 主分类号: G06F19/00
- IPC分类号: G06F19/00 ; G01N37/00 ; G06F11/30 ; G21C17/00
摘要:
A method comprises computing respective regression models for each of a plurality of failure bins based on a plurality of failures identified during wafer electrical tests. Each regression model outputs a wafer yield measure as a function of a plurality of device performance variables. For each failure bin, sensitivity of the wafer yield measure to each of the plurality of device performance variables is determined, and the device performance variables are ranked with respect to sensitivity of the wafer yield measure. A subset of the device performance variables which have highest rankings and which have less than a threshold correlation with each other are selected. The wafer yield measures for each failure bin corresponding to one of the selected subset of device performance variables are combined, to provide a combined wafer yield measure. At least one new process parameter value is selected to effect a change in the one device performance variable, based on the combined wafer yield measure. The at least one new process parameter value is to be used to process at least one additional wafer.
公开/授权文献
- US20120239178A1 DEVICE PERFORMANCE PARMETER TUNING METHOD AND SYSTEM 公开/授权日:2012-09-20