利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

101 条记录 (耗时 0.039 秒)

    Device performance parmeter tuning method and system
    1.
    发明授权
    Device performance parmeter tuning method and system 有权
    设备性能参数调节方法和系统

    公开(公告)号：US08452439B2

    公开(公告)日：2013-05-28

    申请号：US13048282

    申请日：2011-03-15

    申请人： Sunny Wu ,  Chun-Hsien Lin ,  Kun-Ming Chen ,  Dung-Yian Hsieh ,  Hui-Ru Lin ,  Jo Fei Wang ,  Jong-I Mou ,  I-Ching Chu

    发明人： Sunny Wu ,  Chun-Hsien Lin ,  Kun-Ming Chen ,  Dung-Yian Hsieh ,  Hui-Ru Lin ,  Jo Fei Wang ,  Jong-I Mou ,  I-Ching Chu

    IPC分类号： G06F19/00 ,  G01N37/00 ,  G06F11/30 ,  G21C17/00

    CPC分类号： H01L22/20 ,  G01R31/2894 ,  H01L22/14

    摘要： A method comprises computing respective regression models for each of a plurality of failure bins based on a plurality of failures identified during wafer electrical tests. Each regression model outputs a wafer yield measure as a function of a plurality of device performance variables. For each failure bin, sensitivity of the wafer yield measure to each of the plurality of device performance variables is determined, and the device performance variables are ranked with respect to sensitivity of the wafer yield measure. A subset of the device performance variables which have highest rankings and which have less than a threshold correlation with each other are selected. The wafer yield measures for each failure bin corresponding to one of the selected subset of device performance variables are combined, to provide a combined wafer yield measure. At least one new process parameter value is selected to effect a change in the one device performance variable, based on the combined wafer yield measure. The at least one new process parameter value is to be used to process at least one additional wafer.

    摘要翻译： 一种方法包括基于在晶片电测试期间识别的多个故障来计算多个故障仓中的每一个的相应回归模型。 每个回归模型输出作为多个设备性能变量的函数的晶片产量测量。 对于每个故障仓，确定晶片产量测量对多个器件性能变量中的每一个的灵敏度，并且相对于晶片产量测量的灵敏度对器件性能变量进行排序。 选择具有最高排名并且彼此具有小于阈值相关性的设备性能变量的子集。 组合对应于所选择的设备性能变量子集之一的每个故障仓的晶片产量测量，以提供组合晶片产量测量。 选择至少一个新的过程参数值，以基于组合的晶片产量测量来实现一个器件性能变量的变化。 至少一个新的过程参数值将用于处理至少一个附加晶片。

    DEVICE PERFORMANCE PARMETER TUNING METHOD AND SYSTEM
    2.
    发明申请
    DEVICE PERFORMANCE PARMETER TUNING METHOD AND SYSTEM 有权
    装置性能参数调节方法和系统

    公开(公告)号：US20120239178A1

    公开(公告)日：2012-09-20

    申请号：US13048282

    申请日：2011-03-15

    申请人： Sunny Wu ,  Chun-Hsien Lin ,  Kun-Ming Chen ,  Dung-Yian Hsieh ,  Hui-Ru Lin ,  Jo Fei Wang ,  Jong-I Mou ,  I-Ching Chu

    发明人： Sunny Wu ,  Chun-Hsien Lin ,  Kun-Ming Chen ,  Dung-Yian Hsieh ,  Hui-Ru Lin ,  Jo Fei Wang ,  Jong-I Mou ,  I-Ching Chu

    IPC分类号： G06F19/00

    CPC分类号： H01L22/20 ,  G01R31/2894 ,  H01L22/14

    摘要： A method comprises computing respective regression models for each of a plurality of failure bins based on a plurality of failures identified during wafer electrical tests. Each regression model outputs a wafer yield measure as a function of a plurality of device performance variables. For each failure bin, sensitivity of the wafer yield measure to each of the plurality of device performance variables is determined, and the device performance variables are ranked with respect to sensitivity of the wafer yield measure. A subset of the device performance variables which have highest rankings and which have less than a threshold correlation with each other are selected. The wafer yield measures for each failure bin corresponding to one of the selected subset of device performance variables are combined, to provide a combined wafer yield measure. At least one new process parameter value is selected to effect a change in the one device performance variable, based on the combined wafer yield measure. The at least one new process parameter value is to be used to process at least one additional wafer.

    摘要翻译： 一种方法包括基于在晶片电测试期间识别的多个故障来计算多个故障仓中的每一个的相应回归模型。 每个回归模型输出作为多个设备性能变量的函数的晶片产量测量。 对于每个故障仓，确定晶片产量测量对多个器件性能变量中的每一个的灵敏度，并且相对于晶片产量测量的灵敏度对器件性能变量进行排序。 选择具有最高排名并且彼此具有小于阈值相关性的设备性能变量的子集。 组合对应于所选择的设备性能变量子集之一的每个故障仓的晶片产量测量，以提供组合晶片产量测量。 选择至少一个新的过程参数值，以基于组合的晶片产量测量来实现一个器件性能变量的变化。 至少一个新的过程参数值将用于处理至少一个附加晶片。

    ADVANCED PROCESS CONTROL FOR NEW TAPEOUT PRODUCT
    7.
    发明申请
    ADVANCED PROCESS CONTROL FOR NEW TAPEOUT PRODUCT 有权
    新型贴片产品的先进工艺控制

    公开(公告)号：US20110112678A1

    公开(公告)日：2011-05-12

    申请号：US12616681

    申请日：2009-11-11

    申请人： Chih-Wei Hsu ,  Yu-Jen Cheng ,  Wen-Pin Liu ,  Shun-Ping Wang ,  Shin-Rung Lu ,  Jo Fei Wang ,  Jong-I Mou ,  Andy Tsen ,  Chun-Hsien Lin

    发明人： Chih-Wei Hsu ,  Yu-Jen Cheng ,  Wen-Pin Liu ,  Shun-Ping Wang ,  Shin-Rung Lu ,  Jo Fei Wang ,  Jong-I Mou ,  Andy Tsen ,  Chun-Hsien Lin

    IPC分类号： G06F17/50

    CPC分类号： H01L21/67253 ,  G05B19/41865 ,  H01L21/67276 ,  Y02P90/20

    摘要： The present disclosure provides a semiconductor manufacturing method. The method includes providing product data of a product, the product data including a sensitive product parameter; searching existing products according to the sensitive product parameter to identify a relevant product from the existing products; determining an initial value of a processing model parameter to the product using corresponding data of the relevant product; assigning the initial value of the processing model parameter to a processing model associated with a manufacturing process; thereafter, tuning a processing recipe using the processing model; and performing the manufacturing process to a semiconductor wafer using the processing recipe.

    摘要翻译： 本发明提供一种半导体制造方法。 该方法包括提供产品的产品数据，产品数据包括敏感产品参数; 根据敏感产品参数搜索现有产品，从现有产品中识别相关产品; 使用相关产品的相应数据确定产品的处理模型参数的初始值; 将处理模型参数的初始值分配给与制造过程相关联的处理模型; 此后，使用该处理模型调整处理配方; 以及使用所述处理配方对所述半导体晶片进行制造处理。

    Advanced process control for new tapeout product
    8.
    发明授权
    Advanced process control for new tapeout product 有权
    新的流片产品的高级过程控制

    公开(公告)号：US08239056B2

    公开(公告)日：2012-08-07

    申请号：US12616681

    申请日：2009-11-11

    申请人： Chih-Wei Hsu ,  Yu-Jen Cheng ,  Wen-Pin Liu ,  Shun-Ping Wang ,  Shin-Rung Lu ,  Jo Fei Wang ,  Jong-I Mou ,  Andy Tsen ,  Chun-Hsien Lin

    发明人： Chih-Wei Hsu ,  Yu-Jen Cheng ,  Wen-Pin Liu ,  Shun-Ping Wang ,  Shin-Rung Lu ,  Jo Fei Wang ,  Jong-I Mou ,  Andy Tsen ,  Chun-Hsien Lin

    IPC分类号： G06F19/00

    CPC分类号： H01L21/67253 ,  G05B19/41865 ,  H01L21/67276 ,  Y02P90/20

    摘要： The present disclosure provides a semiconductor manufacturing method. The method includes providing product data of a product, the product data including a sensitive product parameter; searching existing products according to the sensitive product parameter to identify a relevant product from the existing products; determining an initial value of a processing model parameter to the product using corresponding data of the relevant product; assigning the initial value of the processing model parameter to a processing model associated with a manufacturing process; thereafter, tuning a processing recipe using the processing model; and performing the manufacturing process to a semiconductor wafer using the processing recipe.

    摘要翻译： 本发明提供一种半导体制造方法。 该方法包括提供产品的产品数据，产品数据包括敏感产品参数; 根据敏感产品参数搜索现有产品，从现有产品中识别相关产品; 使用相关产品的相应数据确定产品的处理模型参数的初始值; 将处理模型参数的初始值分配给与制造过程相关联的处理模型; 此后，使用该处理模型调整处理配方; 以及使用所述处理配方对所述半导体晶片进行制造处理。

    METHOD FOR A BIN RATIO FORECAST AT NEW TAPE OUT STAGE
    9.
    发明申请
    METHOD FOR A BIN RATIO FORECAST AT NEW TAPE OUT STAGE 有权
    新带前端的比率预测方法

    公开(公告)号：US20110010215A1

    公开(公告)日：2011-01-13

    申请号：US12499345

    申请日：2009-07-08

    申请人： Chun-Hsien Lin ,  Andy Tsen ,  Jui-Long Chen ,  Sunny Wu ,  Jong-I Mou ,  Chia-Hung Huang

    发明人： Chun-Hsien Lin ,  Andy Tsen ,  Jui-Long Chen ,  Sunny Wu ,  Jong-I Mou ,  Chia-Hung Huang

    IPC分类号： G06Q10/00 ,  G06F17/18

    CPC分类号： G06Q10/06 ,  G06Q30/0202

    摘要： A method for providing a bin ratio forecast at an early stage of integrated circuit device manufacturing processes is disclosed. The method comprises collecting historical data from one or more processed wafer lots; collect measurement data from one or more skew wafer lots; generating an estimated baseline distribution from the collected historical data and collected measurement data; generating an estimated performance distribution based on one or more specified parameters and the generated estimated baseline distribution; determining a bin ratio forecast by applying a bin definition and a yield degradation factor estimation to the generated estimated performance distribution; determining one or more production targets based on the bin ratio forecast; and processing one or more wafers based on the one or more determined production targets.

    摘要翻译： 公开了一种用于在集成电路器件制造工艺的早期阶段提供容量比预测的方法。 该方法包括从一个或多个处理的晶片批次收集历史数据; 从一个或多个偏斜晶片批量收集测量数据; 从收集的历史数据和收集的测量数据生成估计的基线分布; 基于一个或多个指定参数和所生成的估计基线分布产生估计的性能分布; 通过对所生成的估计性能分布应用仓定义和产量退化因子估计来确定仓比预测; 根据仓比预测确定一个或多个生产目标; 以及基于所述一个或多个确定的生产目标来处理一个或多个晶圆。

    Method for a bin ratio forecast at new tape out stage
    10.
    发明授权
    Method for a bin ratio forecast at new tape out stage 有权
    新磁带出站时的比例预测方法

    公开(公告)号：US08082055B2

    公开(公告)日：2011-12-20

    申请号：US12499345

    申请日：2009-07-08

    申请人： Chun-Hsien Lin ,  Andy Tsen ,  Jui-Long Chen ,  Sunny Wu ,  Jong-I Mou ,  Chia-Hung Huang

    发明人： Chun-Hsien Lin ,  Andy Tsen ,  Jui-Long Chen ,  Sunny Wu ,  Jong-I Mou ,  Chia-Hung Huang

    IPC分类号： G06F19/00

    CPC分类号： G06Q10/06 ,  G06Q30/0202

    摘要： A method for providing a bin ratio forecast at an early stage of integrated circuit device manufacturing processes is disclosed. The method comprises collecting historical data from one or more processed wafer lots; collect measurement data from one or more skew wafer lots; generating an estimated baseline distribution from the collected historical data and collected measurement data; generating an estimated performance distribution based on one or more specified parameters and the generated estimated baseline distribution; determining a bin ratio forecast by applying a bin definition and a yield degradation factor estimation to the generated estimated performance distribution; determining one or more production targets based on the bin ratio forecast; and processing one or more wafers based on the one or more determined production targets.

    摘要翻译： 公开了一种用于在集成电路器件制造工艺的早期阶段提供容量比预测的方法。 该方法包括从一个或多个处理的晶片批次收集历史数据; 从一个或多个偏斜晶片批量收集测量数据; 从收集的历史数据和收集的测量数据生成估计的基线分布; 基于一个或多个指定参数和所生成的估计基线分布产生估计的性能分布; 通过对所生成的估计性能分布应用仓定义和产量退化因子估计来确定仓比预测; 根据仓比预测确定一个或多个生产目标; 以及基于所述一个或多个确定的生产目标来处理一个或多个晶圆。