- 专利标题： Methods of forming secured metal gate antifuse structures
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申请号： US13077681申请日： 2011-03-31
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公开(公告)号： US08618613B2公开(公告)日： 2013-12-31
- 发明人: Xianghong Tong , Zhanping Chen , Walid M. Hafez , Zhiyong Ma , Sarvesh H. Kulkarni , Kevin X. Zhang , Matthew B. Pedersen , Kevin D. Johnson
- 申请人： Xianghong Tong , Zhanping Chen , Walid M. Hafez , Zhiyong Ma , Sarvesh H. Kulkarni , Kevin X. Zhang , Matthew B. Pedersen , Kevin D. Johnson
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Forefront IP Lawgroup, PLLC
- 主分类号： H01L27/11
- IPC分类号： H01L27/11 ; H01L21/02 ; H01L23/52
摘要：
Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.