发明授权
US08624288B2 Light emitting diode having vertical topology and method of making the same
有权
具有垂直拓扑的发光二极管及其制造方法
- 专利标题: Light emitting diode having vertical topology and method of making the same
- 专利标题(中): 具有垂直拓扑的发光二极管及其制造方法
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申请号: US13219356申请日: 2011-08-26
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公开(公告)号: US08624288B2公开(公告)日: 2014-01-07
- 发明人: Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
- 申请人: Jun Ho Jang , Jae Wan Choi , Duk Kyu Bae , Hyun Kyong Cho , Jong Kook Park , Sun Jung Kim , Jeong Soo Lee
- 申请人地址: KR Seoul KR Seoul
- 专利权人: LG Electronics, Inc.,LG Innotek Co., Ltd.
- 当前专利权人: LG Electronics, Inc.,LG Innotek Co., Ltd.
- 当前专利权人地址: KR Seoul KR Seoul
- 代理机构: McKenna Long & Aldridge, LLP
- 优先权: KR10-2006-0057033 20060623; KR10-2006-0093465 20060926; KR10-2006-0093574 20060926
- 主分类号: H01L33/36
- IPC分类号: H01L33/36 ; H01L33/44
摘要:
An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
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