Invention Grant
- Patent Title: Photodetector structure and method of manufacturing the same
- Patent Title (中): 光电检测器结构及其制造方法
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Application No.: US13191902Application Date: 2011-07-27
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Publication No.: US08728850B2Publication Date: 2014-05-20
- Inventor: Ho-Chul Ji , Kyoung Won Na , Kyoung Ho Ha , Pil-Kyu Kang
- Applicant: Ho-Chul Ji , Kyoung Won Na , Kyoung Ho Ha , Pil-Kyu Kang
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2010-0072688 20100728
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/028 ; H01L31/18
Abstract:
A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.
Public/Granted literature
- US20120025265A1 PHOTODETECTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-02-02
Information query
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