发明授权
US08765330B2 Phase shift mask for extreme ultraviolet lithography and method of fabricating same 有权
用于极紫外光刻的相移掩模及其制造方法

Phase shift mask for extreme ultraviolet lithography and method of fabricating same
摘要:
A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
信息查询
0/0