Invention Grant
- Patent Title: Phase shift mask for extreme ultraviolet lithography and method of fabricating same
- Patent Title (中): 用于极紫外光刻的相移掩模及其制造方法
-
Application No.: US13564198Application Date: 2012-08-01
-
Publication No.: US08765330B2Publication Date: 2014-07-01
- Inventor: Chia-Tsung Shih , Pei-Chung Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
- Applicant: Chia-Tsung Shih , Pei-Chung Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/54

Abstract:
A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
Public/Granted literature
- US20140038086A1 Phase Shift Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same Public/Granted day:2014-02-06
Information query