发明授权
- 专利标题： Semiconductor constructions
- 专利标题（中）： 半导体结构
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申请号： US13108847申请日： 2011-05-16
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公开(公告)号： US08785989B2公开(公告)日： 2014-07-22
- 发明人: Lucien J. Bissey , William A. Stanton
- 申请人： Lucien J. Bissey , William A. Stanton
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; G03F7/00 ; H01L21/768 ; H01L21/311 ; H01L21/312
摘要：
The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist.
公开/授权文献
- US20110215387A1 Semiconductor Constructions 公开/授权日：2011-09-08
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