Semiconductor constructions
    1.
    发明授权
    Semiconductor constructions 有权
    半导体结构

    公开(公告)号:US08785989B2

    公开(公告)日:2014-07-22

    申请号:US13108847

    申请日:2011-05-16

    摘要: The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist.

    摘要翻译: 本发明包括含光学可饱和吸收层的半导体结构。 光可饱和吸收层可以在光致抗蚀剂和形貌之间,其中形貌具有两个或更多个相对于彼此具有不同反射率的表面。 本发明还包括图案化光刻胶的方法,其中在光致抗蚀剂和具有不同反射率的表面之间设置饱和吸收层的光刻胶,并且其中反射率的差异被用于增强图像在光刻胶中形成的精度 光刻胶。

    Methods for defining evaluation points for optical proximity correction and optical proximity correction methods including same
    2.
    发明授权
    Methods for defining evaluation points for optical proximity correction and optical proximity correction methods including same 有权
    用于定义光学邻近校正的评估点的方法和包括其的光学邻近校正方法

    公开(公告)号:US08584058B2

    公开(公告)日:2013-11-12

    申请号:US13253651

    申请日:2011-10-05

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36

    摘要: Methods are disclosed for defining evaluation points for use in optical proximity correction of a rectangular target geometry. A method for defining evaluation points for use in optical proximity correction of a rectangular target geometry may comprise predicting a contour of an image to be produced in an optical proximity correction simulation of a target geometry. The target geometry may comprise a plurality of line segments, each line segment of the plurality having one evaluation point defined thereon. The method may further comprise shifting at least one evaluation point to an associated point on the predicted contour of the image.

    摘要翻译: 公开了用于定义用于矩形目标几何的光学邻近校正的评估点的方法。 用于定义用于矩形目标几何的光学邻近校正的评估点的方法可以包括预测要在目标几何的光学邻近校正模拟中产生的图像的轮廓。 目标几何可以包括多个线段,多个中的每个线段具有在其上定义的一个评估点。 该方法还可以包括将至少一个评估点移动到图像的预测轮廓上的相关点上。

    METHODS FOR DEFINING EVALUATION POINTS FOR OPTICAL PROXIMITY CORRECTION AND OPTICAL PROXIMITY CORRECTION METHODS INCLUDING SAME
    3.
    发明申请
    METHODS FOR DEFINING EVALUATION POINTS FOR OPTICAL PROXIMITY CORRECTION AND OPTICAL PROXIMITY CORRECTION METHODS INCLUDING SAME 有权
    用于定义光学近似校正和光学近似校正方法的评估点的方法

    公开(公告)号:US20120030638A1

    公开(公告)日:2012-02-02

    申请号:US13253651

    申请日:2011-10-05

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36

    摘要: Methods are disclosed for defining evaluation points for use in optical proximity correction of a rectangular target geometry. A method for defining evaluation points for use in optical proximity correction of a rectangular target geometry may comprise predicting a contour of an image to be produced in an optical proximity correction simulation of a target geometry. The target geometry may comprise a plurality of line segments, each line segment of the plurality having one evaluation point defined thereon. The method may further comprise shifting at least one evaluation point to an associated point on the predicted contour of the image.

    摘要翻译: 公开了用于定义用于矩形目标几何的光学邻近校正的评估点的方法。 用于定义用于矩形目标几何的光学邻近校正的评估点的方法可以包括预测要在目标几何的光学邻近校正模拟中产生的图像的轮廓。 目标几何可以包括多个线段,多个中的每个线段具有在其上定义的一个评估点。 该方法还可以包括将至少一个评估点移动到图像的预测轮廓上的相关点上。

    Methods for defining evaluation points for optical proximity correction and optical proximity correction methods including same
    4.
    发明授权
    Methods for defining evaluation points for optical proximity correction and optical proximity correction methods including same 有权
    用于定义光学邻近校正的评估点的方法和包括其的光学邻近校正方法

    公开(公告)号:US08037446B2

    公开(公告)日:2011-10-11

    申请号:US12174171

    申请日:2008-07-16

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36

    摘要: Methods are disclosed for defining evaluation points for use in optical proximity correction of a rectangular target geometry. A method for defining evaluation points for use in optical proximity correction of a rectangular target geometry may comprise predicting a contour of an image to be produced in an optical proximity correction simulation of a target geometry. The target geometry may comprise a plurality of line segments, each line segment of the plurality having one evaluation point defined thereon. The method may further comprise shifting at least one evaluation point to an associated point on the predicted contour of the image.

    摘要翻译: 公开了用于定义用于矩形目标几何的光学邻近校正的评估点的方法。 用于定义用于矩形目标几何的光学邻近校正的评估点的方法可以包括预测要在目标几何的光学邻近校正模拟中产生的图像的轮廓。 目标几何可以包括多个线段,多个中的每个线段具有在其上定义的一个评估点。 该方法还可以包括将至少一个评估点移动到图像的预测轮廓上的相关点上。

    MASKS FOR MICROLITHOGRAPHY AND METHODS OF MAKING AND USING SUCH MASKS
    5.
    发明申请
    MASKS FOR MICROLITHOGRAPHY AND METHODS OF MAKING AND USING SUCH MASKS 有权
    用于微结构的掩模和制造和使用这种掩模的方法

    公开(公告)号:US20110045388A1

    公开(公告)日:2011-02-24

    申请号:US12917249

    申请日:2010-11-01

    IPC分类号: G03F1/00

    CPC分类号: G03F1/00 G03F1/30 G03F1/72

    摘要: Masks for microlithography apparatus, methods for making such masks, and methods for exposing photosensitive materials to form arrays of microfeatures on semiconductor wafers using such masks. In one embodiment, a method of making a mask comprises forming a mask layer on a substrate and identifying a first opening in the mask layer corresponding to a first feature site at which an intensity of the radiation at a focal zone is less than the intensity of the radiation at the focal zone for a second feature site corresponding to a second opening in the mask. The second opening is adjacent or at least proximate the first opening. The method can further include forming a first surface at the first opening and a second surface at the second opening such that radiation passing through the second opening constructively interferes with radiation passing through the first opening at the focal zone.

    摘要翻译: 用于微光刻设备的掩模,用于制造这种掩模的方法,以及用于使用这种掩模在半导体晶片上曝光感光材料以形成微特征阵列的方法。 在一个实施例中,制造掩模的方法包括在衬底上形成掩模层,并且识别掩模层中对应于焦点区域处的辐射强度小于第一特征部位的第一开口, 用于与掩模中的第二开口相对应的第二特征部位的焦点区域处的辐射。 第二开口相邻或至少靠近第一开口。 该方法还可以包括在第一开口处形成第一表面和在第二开口处形成第二表面,使得穿过第二开口的辐射构造地干扰通过聚焦区域处的第一开口的辐射。

    Guided-mode-resonance transmission color filters for color generation in CMOS image sensors
    6.
    发明授权
    Guided-mode-resonance transmission color filters for color generation in CMOS image sensors 有权
    用于CMOS图像传感器中彩色生成的引导型共振透射滤色器

    公开(公告)号:US07858921B2

    公开(公告)日:2010-12-28

    申请号:US12115045

    申请日:2008-05-05

    IPC分类号: G02B5/30

    CPC分类号: H01L27/14621 H01L27/14629

    摘要: Imager pixel arrays and methods for forming imager pixel arrays. An image sensor pixel includes a photosensor and a waveguide grating resonance filter formed over the photosensor. The waveguide grating resonance filter is configured to pass light to the photosensor in a wavelength band and to block light outside of the wavelength band. The waveguide grating resonance filter includes a grating material having a first refractive index and arranged in a grating pattern with a grating pitch, and has an effective refractive index that is a function of the first refractive index. A combination of the grating pitch and the effective refractive index is selected to correspond to the wavelength band.

    摘要翻译: 成像器像素阵列和形成成像器像素阵列的方法。 图像传感器像素包括光传感器和形成在光传感器上的波导光栅谐振滤波器。 波导光栅谐振滤波器被配置为将光传送到波长带中的光电传感器并阻挡波长带外的光。 波导光栅谐振滤波器包括具有第一折射率的光栅材料,并且以光栅间距布置成格栅图案,并且具有作为第一折射率的函数的有效折射率。 选择光栅间距和有效折射率的组合以对应于波长带。

    GUIDED-MODE-RESONANCE TRANSMISSION COLOR FILTERS FOR COLOR GENERATION IN CMOS IMAGE SENSORS
    7.
    发明申请
    GUIDED-MODE-RESONANCE TRANSMISSION COLOR FILTERS FOR COLOR GENERATION IN CMOS IMAGE SENSORS 有权
    用于CMOS图像传感器中颜色生成的导向模式共振传输滤色片

    公开(公告)号:US20090272880A1

    公开(公告)日:2009-11-05

    申请号:US12115045

    申请日:2008-05-05

    IPC分类号: H01L31/0232 H01L31/18

    CPC分类号: H01L27/14621 H01L27/14629

    摘要: Imager pixel arrays and methods for forming imager pixel arrays. An image sensor pixel includes a photosensor and a waveguide grating resonance filter formed over the photosensor. The waveguide grating resonance filter is configured to pass light to the photosensor in a wavelength band and to block light outside of the wavelength band. The waveguide grating resonance filter includes a grating material having a first refractive index and arranged in a grating pattern with a grating pitch, and has an effective refractive index that is a function of the first refractive index. A combination of the grating pitch and the effective refractive index is selected to correspond to the wavelength band.

    摘要翻译: 成像器像素阵列和形成成像器像素阵列的方法。 图像传感器像素包括光传感器和形成在光传感器上的波导光栅谐振滤波器。 波导光栅谐振滤波器被配置为将光传送到波长带中的光电传感器并阻挡波长带外的光。 波导光栅谐振滤波器包括具有第一折射率的光栅材料,并且以光栅间距布置成格栅图案,并且具有作为第一折射率的函数的有效折射率。 选择光栅间距和有效折射率的组合以对应于波长带。

    Methods of patterning photoresist, and methods of forming semiconductor constructions
    8.
    发明授权
    Methods of patterning photoresist, and methods of forming semiconductor constructions 有权
    图案化光刻胶的方法,以及形成半导体结构的方法

    公开(公告)号:US07432197B2

    公开(公告)日:2008-10-07

    申请号:US11341201

    申请日:2006-01-27

    IPC分类号: H01L21/44

    摘要: The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist.

    摘要翻译: 本发明包括含光学可饱和吸收层的半导体结构。 光可饱和吸收层可以在光致抗蚀剂和形貌之间,其中形貌具有两个或更多个相对于彼此具有不同反射率的表面。 本发明还包括图案化光刻胶的方法,其中在光致抗蚀剂和具有不同反射率的表面之间设置饱和吸收层的光刻胶,并且其中反射率的差异被用于增强图像在光刻胶中形成的精度 光刻胶。

    Method and apparatus to increase throughput of processing using pulsed radiation sources
    9.
    发明授权
    Method and apparatus to increase throughput of processing using pulsed radiation sources 有权
    使用脉冲辐射源提高处理能力的方法和装置

    公开(公告)号:US07282666B2

    公开(公告)日:2007-10-16

    申请号:US10841857

    申请日:2004-05-07

    IPC分类号: B23K26/067

    摘要: A material processing system and method is disclosed for processing materials such as amorphous silicon in an annealing processes and lithography processes on a silicon wafer, as well as ablation processes. A first laser generates periodic pulses of radiation along a beam path directed at the target material. Similarly, at least one additional laser generates periodic pulses. A beam aligner redirects the beam path of the at least one laser, such that the beam from the at least one additional laser is directed at the target along a path colinear with the first laser's beam path. As a result, all the lasers are directed at the target along the same combined beam path. The periodic pulses of the at least one additional laser are delayed relative to the first laser such that multiple pulses impinge on the target within a single pulse cycle of any given laser.

    摘要翻译: 公开了一种材料处理系统和方法,用于在硅晶片上的退火工艺和光刻工艺中处理诸如非晶硅的材料,以及消融工艺。 第一激光器沿着指向目标材料的光束路径产生周期性的辐射脉冲。 类似地,至少一个附加激光器产生周期性脉冲。 光束对准​​器重定向至少一个激光器的光束路径,使得来自至少一个附加激光器的光束沿着与第一激光束的光束路径共线的路径被引导到目标。 因此,所有的激光都沿相同的组合光束路径被引导到目标。 至少一个附加激光器的周期性脉冲相对于第一激光器被延迟,使得多个脉冲在任何给定激光器的单个脉冲周期内撞击目标物。

    Mask having transmissive elements and a common sidelobe inhibitor for sidelobe suppression in radiated patterning
    10.
    发明授权
    Mask having transmissive elements and a common sidelobe inhibitor for sidelobe suppression in radiated patterning 有权
    掩模具有透射元件和共同的旁瓣抑制剂,用于辐射图案化中的旁瓣抑制

    公开(公告)号:US07273684B2

    公开(公告)日:2007-09-25

    申请号:US11336229

    申请日:2006-01-20

    IPC分类号: G03F1/00

    CPC分类号: G03F1/36

    摘要: A mask having transmissive elements and one or more sidelobe inhibitors for sidelobe suppression during a radiation-patterning process is provided. Sidelobe artifacts are mitigated by identifying elements as a function of the radiation wavelength for forming desired profiles on a semiconductor wafer. A diffraction rings is calculated around each of the elements to identify sidelobe interference zones and intersections of diffraction rings are located. When a guard ring around one of the intersections Sidelobe inhibitor is located at the a common sidelobe common overlap region of the guard rings. A method for forming a mask with the addition of sidelobe inhibitors as well as a method for determining the location of placement of sidelobe inhibitors is also disclosed.

    摘要翻译: 提供了具有透射元件的掩模和用于在辐射图案化工艺期间旁瓣抑制的一个或多个旁瓣抑制剂。 通过将元件识别为用于在半导体晶片上形成所需轮廓的辐射波长的函数来减轻旁瓣伪影。 围绕每个元素计算衍射环以识别旁瓣干涉区,并且定位衍射环的交点。 当保护环围绕一个交叉点旁瓣抑制剂位于保护环的共同旁瓣共同重叠区域时。 还公开了添加旁瓣抑制剂形成掩模的方法以及用于确定旁瓣抑制剂的放置位置的方法。