发明授权
- 专利标题： Ion beam sputter target and method of manufacture
- 专利标题（中）： 离子束溅射靶及其制造方法
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申请号： US12792324申请日： 2010-06-02
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公开(公告)号： US08821701B2公开(公告)日： 2014-09-02
- 发明人: Clifton Higdon , Alaa A. Elmoursi , Jason Goldsmith , Bruce Cook , Peter Blau , Qu Jun , Robert Milner
- 申请人： Clifton Higdon , Alaa A. Elmoursi , Jason Goldsmith , Bruce Cook , Peter Blau , Qu Jun , Robert Milner
- 代理机构： Rader, Fishman & Grauer PLLC
- 主分类号： C23C14/00
- IPC分类号： C23C14/00 ; C25B9/00 ; C25B11/00 ; C25B13/00
摘要：
A target for use in an ion beam sputtering apparatus made of at least two target tiles where at least two of the target tiles are made of different chemical compositions and are mounted on a main tile and geometrically arranged on the main tile to yield a desired chemical composition on a sputtered substrate. In an alternate embodiment, the tiles are of varied thickness according to the desired chemical properties of the sputtered film. In yet another alternate embodiment, the target is comprised of plugs pressed in a green state which are disposed in cavities formed in a main tile also formed in a green state and the assembly can then be compacted and then sintered.
公开/授权文献
- US20110297535A1 ION BEAM SPUTTER TARGET AND METHOD OF MANUFACTURE 公开/授权日：2011-12-08
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