发明授权
US08847263B2 Sapphire substrate having triangular projections with outer perimeter formed of continuous curve
有权
蓝宝石衬底具有由连续曲线形成的具有外周边的三角形突起
- 专利标题： Sapphire substrate having triangular projections with outer perimeter formed of continuous curve
- 专利标题（中）： 蓝宝石衬底具有由连续曲线形成的具有外周边的三角形突起
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申请号： US13831211申请日： 2013-03-14
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公开(公告)号： US08847263B2公开(公告)日： 2014-09-30
- 发明人: Junya Narita , Takuya Okada , Yohei Wakai , Yoshiki Inoue , Naoya Sako , Katsuyoshi Kadan
- 申请人： Nichia Corporation
- 申请人地址： JP Anan-shi
- 专利权人： Nichia Corporation
- 当前专利权人： Nichia Corporation
- 当前专利权人地址： JP Anan-shi
- 代理机构： Foley & Lardner LLP
- 优先权： JP2010-177007 20100806
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L33/00 ; H01L33/32 ; H01L33/10 ; H01L33/20
摘要：
A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.
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