Invention Grant
US08847263B2 Sapphire substrate having triangular projections with outer perimeter formed of continuous curve
有权
蓝宝石衬底具有由连续曲线形成的具有外周边的三角形突起
- Patent Title: Sapphire substrate having triangular projections with outer perimeter formed of continuous curve
- Patent Title (中): 蓝宝石衬底具有由连续曲线形成的具有外周边的三角形突起
-
Application No.: US13831211Application Date: 2013-03-14
-
Publication No.: US08847263B2Publication Date: 2014-09-30
- Inventor: Junya Narita , Takuya Okada , Yohei Wakai , Yoshiki Inoue , Naoya Sako , Katsuyoshi Kadan
- Applicant: Nichia Corporation
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Foley & Lardner LLP
- Priority: JP2010-177007 20100806
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L33/00 ; H01L33/32 ; H01L33/10 ; H01L33/20
Abstract:
A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.
Public/Granted literature
- US20130270593A1 SAPPHIRE SUBSTRATE AND SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2013-10-17
Information query
IPC分类:
