摘要:
A method of manufacturing a display device 1 includes: providing a substrate including at least one sub-pixel defined therein and a first wiring disposed for the sub-pixel, and the light-emitting element that includes a first electrode disposed on a lower surface and a second electrode disposed on at least two lateral surfaces intersecting with each other; mounting the light-emitting element on the substrate and electrically connecting the first electrode to the first wiring; forming a resin member covering the at least one light-emitting element, on the substrate, exposing a portion of the second electrode from an upper surface of the resin member by removing an upper portion of the resin member; and forming a second wiring with a mesh shape on the resin member such that a portion of the second wiring is disposed on the light-emitting element to electrically connect the second wiring to the second electrode.
摘要:
A method of manufacturing a display device 1 includes: providing a substrate including sub-pixel defined therein and a first wiring disposed for the sub-pixel, and light-emitting element having a lower surface and a lateral surface and including a first electrode disposed on the lower surface, and a second electrode disposed on the lateral surface; mounting the light-emitting element and electrically connecting the first electrode to the first wiring; forming a resin member on the substrate and covering the light-emitting element; exposing an upper portion of the light-emitting element from an upper surface of the resin member such that the second electrode is partially exposed by removing an upper portion of the resin member; and forming a second wiring on the upper surface of the resin member excluding a portion of the light-emitting element exposed from the resin member and electrically connecting the second wiring to the second electrode.
摘要:
The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.
摘要:
The present invention provides a light emitting element capable or realizing at least one of lower resistance, higher output, higher power efficiency (1 m/W), higher mass productivity and lower cost of the element using a light transmissive electrode for an electrode arranged exterior to the light emitting structure. A semiconductor light emitting element includes a light emitting section, a first electrode and a second electrode on a semiconductor structure including first and second conductive type semiconductor layers, the first and the second electrodes respectively including at least two layers of a first layer of a light transmissive conductive film conducting to the first and the second conductive type semiconductor and a second layer arranged so as to conduct with the first layer. First and second light transmissive insulating films are respectively arranged so as to overlap at least one part of the first and the second layers.
摘要:
A method of manufacturing a light emitting device, the method includes: preparing an intermediate structure including a supporter, a plurality of light emitting elements arranged on the supporter, a covering layer arranged on the supporter and surrounding the light emitting elements, and wiring electrodes each arranged on and straddling the covering layer and a corresponding one of the light emitting elements: preparing a board including light-reflective resin arranged on a surface of the board; pressing the intermediate structure against the light-reflective resin arranged on the board, with the wiring electrodes facing the light-reflective resin; curing the light-reflective resin to form a light-reflective resin layer; and removing the supporter.
摘要:
A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.
摘要:
A light emitting module includes a substrate, a light reflective resin layer, wiring electrodes and a light emitting element. The light reflective resin layer is arranged on the substrate. The wiring electrodes are arranged over the substrate with the light reflective resin layer being interposed between the substrate and the wiring electrodes. The light emitting element has an electrode formation surface including a positive and negative pair of element electrodes, and a light emitting surface on a side opposite to the electrode formation surface. The light emitting element is arranged on top surfaces of the wiring electrodes with the element electrodes facing the top surfaces of the wiring electrodes.
摘要:
A method of manufacturing a light emitting module including a substrate; a light emitting element having an electrode formation surface comprising a positive and negative pair of element electrodes, and a light emitting surface on the side opposite to the electrode formation surface; a wiring electrode connected to the element electrode; and a light reflective resin layer, the method of manufacturing a light emitting module including: placing the light emitting element on a support member, in a state with the electrode formation surface facing upward, and the light emitting surface facing downward; forming a coating layer on the support member, surrounding the light emitting element; forming the wiring electrode extending from the element electrode over the coating layer; forming the light reflective resin layer on the wiring electrode and the coating layer; joining the substrate on top of the light reflective resin layer; removing the support member; and removing the coating layer.
摘要:
The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.
摘要:
A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.