公开(公告)号：US08847263B2

公开(公告)日：2014-09-30

申请号：US13831211

申请日：2013-03-14

申请人： Nichia Corporation

发明人： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/32 ,  H01L33/10 ,  H01L33/20

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

摘要翻译： 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括在主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 各个突起的底部的顶点在与蓝宝石基板的晶轴“a”顺时针旋转30度的方向的±10度的范围内延伸。

公开(公告)号：US09525103B2

公开(公告)日：2016-12-20

申请号：US14734961

申请日：2015-06-09

申请人： NICHIA CORPORATION

发明人： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/10

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

摘要翻译： 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US20140306265A1

公开(公告)日：2014-10-16

申请号：US14314516

申请日：2014-06-25

申请人： NICHIA CORPORATION

发明人： Junya NARITA ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L33/32

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

摘要翻译： 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US09070814B2

公开(公告)日：2015-06-30

申请号：US14314516

申请日：2014-06-25

申请人： NICHIA CORPORATION

发明人： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L33/32 ,  H01L33/10 ,  H01L21/02 ,  H01L33/00 ,  H01L33/20

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

摘要翻译： 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US08847262B2

公开(公告)日：2014-09-30

申请号：US13831138

申请日：2013-03-14

申请人： Nichia Corporation

发明人： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/10 ,  H01L33/32

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

摘要翻译： 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括在主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 相应突起的底部的顶点在从蓝宝石基板的晶轴“a”逆时针旋转30度的方向的±10度的范围内延伸。

公开(公告)号：US09711685B2

公开(公告)日：2017-07-18

申请号：US15095937

申请日：2016-04-11

申请人： NICHIA CORPORATION

发明人： Naoya Sako ,  Takashi Ohara ,  Yoshiki Inoue ,  Yuki Shibutani ,  Yoshihito Kawauchi ,  Kazuyuki Takeichi ,  Yasunori Nagahama

IPC分类号： H01L33/32 ,  H01L33/22 ,  C30B25/18 ,  C30B29/20 ,  C30B29/40 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/308 ,  H01L21/02 ,  H01L33/24 ,  H01L33/00

CPC分类号： H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

摘要： A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.

公开(公告)号：US09337390B2

公开(公告)日：2016-05-10

申请号：US14593728

申请日：2015-01-09

申请人： NICHIA CORPORATION

发明人： Naoya Sako ,  Takashi Ohara ,  Yoshiki Inoue ,  Yuki Shibutani ,  Yoshihito Kawauchi ,  Kazuyuki Takeichi ,  Yasunori Nagahama

IPC分类号： H01L33/32 ,  C30B25/18 ,  C30B29/20 ,  C30B29/40 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/308 ,  H01L21/02 ,  H01L33/24

CPC分类号： H01L33/22 ,  C30B25/183 ,  C30B25/186 ,  C30B29/20 ,  C30B29/403 ,  C30B29/406 ,  C30B33/08 ,  C30B33/10 ,  C30B33/12 ,  H01L21/02002 ,  H01L21/308 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

摘要： A method for manufacturing a sapphire substrate in which a plurality of projections are formed on a C-plane of the sapphire substrate by etching, includes: forming a patterned etching mask on the C-plane of the sapphire substrate; etching the sapphire substrate until the projections are formed, wherein each of the projections formed by the etching has a substantially triangular pyramidal-shape and has a plurality of side surfaces, a pointed top and a bottom, wherein the bottom of each of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides. The projections are arranged on vertexes of a triangular lattice, and an orientation of the bottom of the projections conforms with an orientation that is rotated by about 30 degrees from an orientation of a triangle of the triangular lattice; and removing the etching mask from the sapphire substrate.

摘要翻译： 一种制造蓝宝石衬底的方法，其中通过蚀刻在蓝宝石衬底的C平面上形成多个突起，包括：在蓝宝石衬底的C面上形成图案化蚀刻掩模; 蚀刻蓝宝石衬底直到形成突起，其中通过蚀刻形成的每个突起具有大致三角锥形，并且具有多个侧表面，尖顶和底部，其中每个突起的底部具有 具有三个向外弯曲的弧形侧面的大致三角形形状。 突起被布置在三角形格子的顶点上，并且突起的底部的取向与从三角形格子的三角形的取向旋转约30度的取向一致; 并从蓝宝石衬底去除蚀刻掩模。