公开(公告)号：US08847263B2

公开(公告)日：2014-09-30

申请号：US13831211

申请日：2013-03-14

申请人： Nichia Corporation

发明人： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/32 ,  H01L33/10 ,  H01L33/20

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

摘要翻译： 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括在主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 各个突起的底部的顶点在与蓝宝石基板的晶轴“a”顺时针旋转30度的方向的±10度的范围内延伸。

公开(公告)号：US11043615B2

公开(公告)日：2021-06-22

申请号：US17010828

申请日：2020-09-03

申请人： NICHIA CORPORATION

发明人： Daisuke Iwakura ,  Yoshiki Inoue

IPC分类号： H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  C09K11/77 ,  C09K11/64 ,  C09K11/61 ,  H01L33/56 ,  H01L33/54

摘要： A light-emitting device includes a light-emitting element having a top surface, a bottom surface opposite to the top surface, and side surfaces connecting the top surface and the bottom surface. An element electrode of the light-emitting element is located on the bottom surface. A phosphor layer is disposed above the top surface of the light-emitting element and having side surfaces. A reflective member covers side surfaces of the light-emitting element and side surfaces of the phosphor layer. A dielectric multilayer film is disposed on at least one of the side surfaces of the light-emitting element and disposed on at least one of the side surfaces of the phosphor layer and not located between the light emitting element and the phosphor layer. The dielectric multilayer film is not provided on an upper surface of the phosphor layer.

公开(公告)号：US20140306265A1

公开(公告)日：2014-10-16

申请号：US14314516

申请日：2014-06-25

申请人： NICHIA CORPORATION

发明人： Junya NARITA ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L33/32

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

摘要翻译： 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US11011688B2

公开(公告)日：2021-05-18

申请号：US16682062

申请日：2019-11-13

申请人： NICHIA CORPORATION

发明人： Yoshiki Inoue ,  Naoto Furuha ,  Tadaaki Ikeda

IPC分类号： H01L33/60 ,  H01L33/50 ,  H01L33/38 ,  H01L33/62 ,  H01L25/075

摘要： A light emitting element includes: a light reflecting member including a first region and a second region; a first semiconductor layered body disposed between the first region and the second region and configured to emit first light having a first peak wavelength; a second semiconductor layered body disposed between the first semiconductor layered body and the second region and configured to emit second light having a second peak wavelength different from the first peak wavelength; a base member disposed between the first semiconductor layered body and the second semiconductor layered body; and a wavelength conversion member on which the first light and the second light is incident, the wavelength conversion member producing third light having a third peak wavelength different from the first peak wavelength and the second peak wavelength.

公开(公告)号：US10797203B2

公开(公告)日：2020-10-06

申请号：US16280045

申请日：2019-02-20

申请人： NICHIA CORPORATION

发明人： Daisuke Iwakura ,  Yoshiki Inoue

IPC分类号： H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  C09K11/77 ,  C09K11/64 ,  C09K11/61 ,  H01L33/56 ,  H01L33/54

摘要： A light emitting device includes a light-transmissive member including a first surface, a second surface opposite to the first surface, and third surfaces connected to the first surface and the second surface. A phosphor layer faces the second surface of the light-transmissive member. A reflective member faces side surfaces of the phosphor layer and the third surfaces of the light-transmissive member. The light-emitting element has a top surface facing the phosphor layer, a bottom surface opposite to the top surface, and side surfaces connecting the top surface and the bottom surface. The phosphor layer has a bonding surface facing the light emitting element. A first dielectric multilayer film is arranged on at least one of side surfaces of the light-emitting element without being provided on the bonding surface of the phosphor layer.

公开(公告)号：US09929316B2

公开(公告)日：2018-03-27

申请号：US15388507

申请日：2016-12-22

申请人： NICHIA CORPORATION

发明人： Keiji Emura ,  Yoshiki Inoue ,  Takamasa Sunda

IPC分类号： H01L33/00 ,  H01L33/40 ,  H01L27/15 ,  H01L33/46 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44

CPC分类号： H01L33/405 ,  H01L27/156 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62

摘要： A light emitting element includes a substrate; a plurality of semiconductor light emitting cells; a plurality of light reflective electrodes; a first insulation layer that continuously covers lateral surfaces of the semiconductor light emitting cells, spaces between the semiconductor light emitting cells, lateral surfaces of the light reflective electrodes, and a portion of upper surfaces of the light reflective electrodes; a plurality of wiring electrodes, and cover the lateral surfaces of the semiconductor light emitting cells and the spaces between the semiconductor light emitting cells via the first insulation layer; and a light reflective metal layer that covers the lateral surfaces of at least two adjacent ones of the semiconductor light emitting cells and the space between said at least two semiconductor light emitting cells, via the first insulation layer.

公开(公告)号：US09070814B2

公开(公告)日：2015-06-30

申请号：US14314516

申请日：2014-06-25

申请人： NICHIA CORPORATION

发明人： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L33/32 ,  H01L33/10 ,  H01L21/02 ,  H01L33/00 ,  H01L33/20

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

摘要翻译： 蓝宝石衬底具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面，并且包括主表面的多个突起，其中每个突起的底表面的外周具有至少一个凹陷。 这个凹陷在水平方向。 多个突起被布置成使得当直线在包括多个突起的底表面的平面的任何方向上的任何位置处被拉伸时，直线穿过至少任一个突起的内部。

公开(公告)号：US08847262B2

公开(公告)日：2014-09-30

申请号：US13831138

申请日：2013-03-14

申请人： Nichia Corporation

发明人： Junya Narita ,  Takuya Okada ,  Yohei Wakai ,  Yoshiki Inoue ,  Naoya Sako ,  Katsuyoshi Kadan

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/10 ,  H01L33/32

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  Y10T428/24 ,  Y10T428/24479

摘要： A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

摘要翻译： 具有用于生长氮化物半导体以形成氮化物半导体发光器件的主表面的蓝宝石衬底包括在主表面上的多个突起。 每个突起具有基本上多边形的底部。 突起的底部的每一侧在其中心具有凹陷。 相应突起的底部的顶点在从蓝宝石基板的晶轴“a”逆时针旋转30度的方向的±10度的范围内延伸。

公开(公告)号：US11855238B2

公开(公告)日：2023-12-26

申请号：US17338446

申请日：2021-06-03

申请人： NICHIA CORPORATION

发明人： Shun Kitahama ,  Yoshiki Inoue ,  Kazuhiro Nagamine ,  Junya Narita

IPC分类号： H01L33/00 ,  H01L33/44 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32 ,  H01L33/22 ,  H01L21/268

CPC分类号： H01L33/0095 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L21/268 ,  H01L33/22 ,  H01L2933/0025

摘要： A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.

公开(公告)号：US11735686B2

公开(公告)日：2023-08-22

申请号：US17113583

申请日：2020-12-07

申请人： NICHIA CORPORATION

发明人： Yoshiki Inoue ,  Shun Kitahama ,  Yoshiyuki Aihara ,  Yoshiki Matsushita ,  Keisuke Higashitani

IPC分类号： H01L33/00 ,  H01L33/50 ,  H01L33/22

CPC分类号： H01L33/0095 ,  H01L33/007 ,  H01L33/22 ,  H01L33/507 ,  H01L2933/0041

摘要： A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.