发明授权
US08853087B2 Method of manufacturing semiconductor device and system for manufacturing semiconductor device
有权
制造半导体器件的方法和用于制造半导体器件的系统
- 专利标题： Method of manufacturing semiconductor device and system for manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法和用于制造半导体器件的系统
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申请号： US13518977申请日： 2010-12-17
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公开(公告)号： US08853087B2公开(公告)日： 2014-10-07
- 发明人: Keisuke Tanaka , Machi Moriya
- 申请人： Keisuke Tanaka , Machi Moriya
- 申请人地址： JP
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP
- 代理机构： Cantor Colburn LLP
- 优先权： JP2009-295209 20091225
- 国际申请： PCT/JP2010/072783 WO 20101217
- 国际公布： WO2011/078083 WO 20110630
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/66 ; G03F7/38 ; G03F7/40 ; H01L21/67 ; H01L21/3213 ; H01L21/033
摘要：
A target space ratio of a monitor pattern on a substrate for inspection is determined to be different from a ratio of 1:1. A range of space ratios in a library is determined to include the target space ratio and not include a space ratio of 1:1. The monitor pattern is formed on a film to be processed by performing predetermined processes on the substrate for inspection. Sizes of the monitor pattern are measured. The sizes of the monitor pattern are converted into sizes of a pattern of the film to be processed having a space ratio of 1:1, and processing conditions of the predetermined processes are compensated for based on the sizes of the converted pattern of the film to be processed. After that, the predetermined processes are performed on a wafer under the compensated conditions to form a pattern having a space ratio of 1:1 on the film to be processed.
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