发明授权
US08906252B1 CMP compositions selective for oxide and nitride with high removal rate and low defectivity
有权
对于具有高去除率和低缺陷率的氧化物和氮化物选择性的CMP组合物
- 专利标题: CMP compositions selective for oxide and nitride with high removal rate and low defectivity
- 专利标题(中): 对于具有高去除率和低缺陷率的氧化物和氮化物选择性的CMP组合物
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申请号: US13898842申请日: 2013-05-21
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公开(公告)号: US08906252B1公开(公告)日: 2014-12-09
- 发明人: Kevin P. Dockery , Renhe Jia , Jeffrey Dysard
- 申请人: Cabot Microelectronics Corporation
- 申请人地址: US IL Aurora
- 专利权人: Cabot Microelelctronics Corporation
- 当前专利权人: Cabot Microelelctronics Corporation
- 当前专利权人地址: US IL Aurora
- 代理商 Thomas E Omholt; Francis J Koszyk; Arlene Hornilla
- 主分类号: C09K13/00
- IPC分类号: C09K13/00 ; C09G1/02 ; B24B37/04
摘要:
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
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