发明授权
US08906252B1 CMP compositions selective for oxide and nitride with high removal rate and low defectivity 有权
对于具有高去除率和低缺陷率的氧化物和氮化物选择性的CMP组合物

CMP compositions selective for oxide and nitride with high removal rate and low defectivity
摘要:
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
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