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公开(公告)号：US09758697B2
公开(公告)日：2017-09-12
申请号：US14639598
申请日：2015-03-05
发明人： Brian Reiss , Dana Sauter Van Ness , Viet Lam , Renhe Jia
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C09K13/00 , H01L21/302 , H01L21/461 , C09G1/02 , C09G1/00 , H01L21/321 , C23F1/14 , H01L21/306
CPC分类号： C09G1/02 , C09G1/00 , C23F1/14 , H01L21/30625 , H01L21/32115 , H01L21/3212
摘要： The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon oxide layer, with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. % a functionalized heterocycle, a cationic polymer selected from a quaternary amine, is cationic polyvinyl alcohol, and a cationic cellulose, optionally a carboxylic acid, a pH-adjusting agent, and an aqueous carrier, and have a pH of about 1 to about 6.
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2.发明授权公开(公告)号：US09422455B2
公开(公告)日：2016-08-23
申请号：US14568311
申请日：2014-12-12
IPC分类号： C09G1/02 , H01L21/311 , C03C15/00 , C23F1/16
CPC分类号： C09G1/02 , C03C15/00 , C23F1/16 , H01L21/31053 , H01L21/31111 , H01L21/76224
摘要： The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, a polyhydroxy aromatic compound, a polyvinyl alcohol, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
摘要翻译： 本发明提供了含有二氧化铈磨料，式I的离子聚合物的化学机械抛光组合物：其中X1和X2，Z1和Z2，R1，R2，R3和R4以及n如本文所定义，多羟基芳族化合物 ，聚乙烯醇和水，其中所述抛光组合物的pH为约1至约4.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。
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3.发明授权CMP compositions selective for oxide and nitride with high removal rate and low defectivity 有权对于具有高去除率和低缺陷率的氧化物和氮化物选择性的CMP组合物公开(公告)号：US08906252B1
公开(公告)日：2014-12-09
申请号：US13898842
申请日：2013-05-21
发明人： Kevin P. Dockery , Renhe Jia , Jeffrey Dysard
CPC分类号： C09G1/02 , B24B37/044 , C09G1/16
摘要： The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
摘要翻译： 本发明提供了含有二氧化铈研磨剂，式I的离子聚合物的化学机械抛光组合物：其中X1和X2，Z1和Z2，R2，R3和R4以及n如本文所定义，和水，其中抛光 组合物的pH为约1至约4.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。
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4.发明申请CMP COMPOSITIONS SELECTIVE FOR OXIDE OVER POLYSILICON AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY 有权选择用于具有高除去速率和低缺陷度的多晶硅和氮化物的氧化物的CMP组合物公开(公告)号：US20140349483A1
公开(公告)日：2014-11-27
申请号：US14289728
申请日：2014-05-29
发明人： Tina LI , Kevin Dockery , Renhe Jia , Jeffrey Dysard
IPC分类号： H01L21/306 , C09G1/02
CPC分类号： G09G1/02 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
摘要翻译： 本发明提供一种含有二氧化铈研磨剂和式I的聚合物的化学机械抛光组合物：其中X1和X2，Y1和Y2，Z1和Z2，R1，R2，R3和R4以及m如本文所定义， 水，其中所述抛光组合物具有约1至约4.5的pH。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。
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公开(公告)号：US09505952B2
公开(公告)日：2016-11-29
申请号：US14639564
申请日：2015-03-05
发明人： Brian Reiss , Dana Sauter Van Ness , Viet Lam , Alexander Hains , Steven Kraft , Renhe Jia
IPC分类号： C09G1/04 , H01L21/302 , B24B37/04 , H01L21/321 , H01L21/306 , B24B1/00 , C09K3/14 , C09K13/06 , C09G1/06 , C09G1/02 , C09G1/00
CPC分类号： C09G1/02 , B24B1/00 , B24B37/044 , B24B37/20 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1409 , C09K3/1454 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.
摘要翻译： 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。
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公开(公告)号：US09434859B2
公开(公告)日：2016-09-06
申请号：US14035037
申请日：2013-09-24
摘要： The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.
摘要翻译： 本发明提供化学机械抛光组合物和用化学机械抛光组合物对基材进行化学机械研磨的方法。 抛光组合物包含（a）包含二氧化铈，氧化锆，二氧化硅，氧化铝或其组合的磨料颗粒，（b）作为路易斯酸的金属离子，（c）作为芳族羧酸的配体，芳族 磺酸，芳香酸酰胺，氨基酸或羟基取代的N-杂环，和（d）水性载体，其中化学机械抛光组合物的pH在约1至约4的范围内。
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公开(公告)号：US09828528B2
公开(公告)日：2017-11-28
申请号：US15338724
申请日：2016-10-31
发明人： Brian Reiss , Dana Sauter Van Ness , Viet Lam , Alexander Hains , Steven Kraft , Renhe Jia
IPC分类号： C09G1/02 , B24B1/00 , B24B37/04 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/14 , C09K13/06 , H01L21/306 , H01L21/321 , H01L21/3105 , B24B37/20
CPC分类号： C09G1/02 , B24B1/00 , B24B37/044 , B24B37/20 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1409 , C09K3/1454 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.
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公开(公告)号：US09340706B2
公开(公告)日：2016-05-17
申请号：US14051121
申请日：2013-10-10
发明人： Brian Reiss , Jakub Nalaskowski , Viet Lam , Renhe Jia , Jeffrey Dysard
IPC分类号： C09G1/02 , H01L21/306 , H01L21/02
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/02013 , H01L21/30625 , H01L21/31053
摘要： The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are ceria particles, second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, a pH-adjusting agent, and an aqueous carrier. The polishing compositions also exhibit multimodal particle size distributions.
摘要翻译： 本发明提供化学 - 机械抛光组合物和用化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 抛光组合物包括第一磨料颗粒，其中第一磨料颗粒是二氧化铈颗粒，第二磨料颗粒，其中第二磨料颗粒是二氧化铈颗粒，表面改性二氧化硅颗粒或有机颗粒，pH调节剂和含水载体 。 抛光组合物还表现出多峰粒度分布。
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9.发明授权CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity 有权CMP组合物选择性优于多晶硅上的氧化物和具有高去除率和低缺陷率的氮化物公开(公告)号：US09165489B2
公开(公告)日：2015-10-20
申请号：US14289728
申请日：2014-05-29
发明人： Tina Li , Kevin Dockery , Renhe Jia , Jeffrey Dysard
IPC分类号： C09K13/00 , G09G1/02 , H01L21/3105 , C09K3/14
CPC分类号： G09G1/02 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
摘要翻译： 本发明提供一种含有二氧化铈研磨剂和式I的聚合物的化学机械抛光组合物：其中X1和X2，Y1和Y2，Z1和Z2，R1，R2，R3和R4以及m如本文所定义， 水，其中所述抛光组合物具有约1至约4.5的pH。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。
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公开(公告)号：US20150083689A1
公开(公告)日：2015-03-26
申请号：US14035037
申请日：2013-09-24
摘要： The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.
摘要翻译： 本发明提供化学机械抛光组合物和用化学机械抛光组合物对基材进行化学机械研磨的方法。 抛光组合物包含（a）包含二氧化铈，氧化锆，二氧化硅，氧化铝或其组合的磨料颗粒，（b）作为路易斯酸的金属离子，（c）作为芳族羧酸的配体，芳族 磺酸，芳香酸酰胺，氨基酸或羟基取代的N-杂环，和（d）水性载体，其中化学机械抛光组合物的pH在约1至约4的范围内。
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