公开(公告)号：US20140346140A1

公开(公告)日：2014-11-27

申请号：US13898842

申请日：2013-05-21

申请人： Cabot Microelectronics Corporation

发明人： Kevin P. Dockery ,  Renhe Jia ,  Jeffrey Dysard

IPC分类号： C09G1/02 ,  B24B37/04

CPC分类号： C09G1/02 ,  B24B37/044 ,  C09G1/16

摘要： The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

摘要翻译： 本发明提供了含有二氧化铈研磨剂，式I的离子聚合物的化学机械抛光组合物：其中X1和X2，Z1和Z2，R2，R3和R4以及n如本文所定义，和水，其中抛光 组合物的pH为约1至约4.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。

公开(公告)号：US10676647B1

公开(公告)日：2020-06-09

申请号：US16236962

申请日：2018-12-31

申请人： Cabot Microelectronics Corporation

发明人： Na Zhang ,  Kevin P. Dockery ,  Zhao Liu ,  Roman A. Ivanov

IPC分类号： G09G1/02 ,  C09G1/02 ,  H01L21/321

摘要： A chemical mechanical polishing composition includes a water based liquid carrier, cationic abrasive particles dispersed in the liquid carrier, a first amino acid compound having an isoelectric point of less than 7 and a second amino acid compound having an isoelectric point of greater than 7. The pH of the composition is in a range from about 1 to about 5. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

公开(公告)号：US10066126B2

公开(公告)日：2018-09-04

申请号：US14988891

申请日：2016-01-06

申请人： Cabot Microelectronics Corporation

发明人： Kevin P. Dockery ,  Helin Huang ,  Matthew Carnes ,  Glenn Whitener

IPC分类号： C09K13/00 ,  C09G1/02 ,  C09K13/06 ,  C09G1/04 ,  H01L21/321

摘要： Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.

公开(公告)号：US20170190936A1

公开(公告)日：2017-07-06

申请号：US14988891

申请日：2016-01-06

申请人： Cabot Microelectronics Corporation

发明人： Kevin P. Dockery ,  Helin Huang ,  Matthew Carnes ,  Glenn Whitener

IPC分类号： C09G1/02 ,  H01L21/321

CPC分类号： C09G1/02 ,  C09G1/04 ,  C09K13/00 ,  C09K13/06 ,  H01L21/31053 ,  H01L21/3212

摘要： Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.

公开(公告)号：US11043151B2

公开(公告)日：2021-06-22

申请号：US15723886

申请日：2017-10-03

申请人： Cabot Microelectronics Corporation

发明人： Ji Cui ,  Helin Huang ,  Kevin P. Dockery ,  Pankaj K. Singh ,  Hung-Tsung Huang ,  Chih-Hsien Chien

IPC分类号： C09G1/02 ,  H01L21/768 ,  H01L21/321 ,  H01L21/3105 ,  G09G1/02

摘要： The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

公开(公告)号：US10647887B2

公开(公告)日：2020-05-12

申请号：US15864720

申请日：2018-01-08

申请人： Cabot Microelectronics Corporation

发明人： Kevin P. Dockery ,  Pankaj K. Singh ,  Steven Grumbine ,  Kim Long

IPC分类号： B24B37/04 ,  C09G1/02 ,  C09K3/14

摘要： The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about −5 mV to about −35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.

公开(公告)号：US08906252B1

公开(公告)日：2014-12-09

申请号：US13898842

申请日：2013-05-21

申请人： Cabot Microelectronics Corporation

发明人： Kevin P. Dockery ,  Renhe Jia ,  Jeffrey Dysard

IPC分类号： C09K13/00 ,  C09G1/02 ,  B24B37/04

CPC分类号： C09G1/02 ,  B24B37/044 ,  C09G1/16

摘要： The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

摘要翻译： 本发明提供了含有二氧化铈研磨剂，式I的离子聚合物的化学机械抛光组合物：其中X1和X2，Z1和Z2，R2，R3和R4以及n如本文所定义，和水，其中抛光 组合物的pH为约1至约4.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。