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    Mixed abrasive polishing compositions
    2.
    发明授权
    Mixed abrasive polishing compositions 有权
    混合研磨抛光组合物

    公开(公告)号：US09340706B2

    公开(公告)日：2016-05-17

    申请号：US14051121

    申请日：2013-10-10

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian Reiss ,  Jakub Nalaskowski ,  Viet Lam ,  Renhe Jia ,  Jeffrey Dysard

    IPC: C09G1/02 ,  H01L21/306 ,  H01L21/02

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02013 ,  H01L21/30625 ,  H01L21/31053

    Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are ceria particles, second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, a pH-adjusting agent, and an aqueous carrier. The polishing compositions also exhibit multimodal particle size distributions.

    Abstract translation: 本发明提供化学 - 机械抛光组合物和用化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 抛光组合物包括第一磨料颗粒，其中第一磨料颗粒是二氧化铈颗粒，第二磨料颗粒，其中第二磨料颗粒是二氧化铈颗粒，表面改性二氧化硅颗粒或有机颗粒，pH调节剂和含水载体 。 抛光组合物还表现出多峰粒度分布。

    Wet-process ceria compositions for polishing substrates, and methods related thereto
    3.
    发明授权
    Wet-process ceria compositions for polishing substrates, and methods related thereto 有权
    用于抛光基底的湿法二氧化铈组合物及其相关方法

    公开(公告)号：US09281210B2

    公开(公告)日：2016-03-08

    申请号：US14050977

    申请日：2013-10-10

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian Reiss ,  Jeffrey Dysard ,  Sairam Shekhar

    IPC: H01L21/306 ,  H01L21/3105

    CPC classification number: H01L21/31053 ,  C09G1/02 ,  C09K3/1463

    Abstract: Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises low average particle size (e.g., 30 nm or less) wet-process ceria abrasive particles, at least one alcohol amine, and water, wherein said polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.

    Abstract translation: 公开了化学机械抛光组合物和抛光基材的方法。 抛光组合物包含低平均粒度（例如，30nm或更小）的湿法二氧化铈磨料颗粒，至少一种醇胺和水，其中所述抛光组合物的pH值约为6.抛光组合物可以使用， 例如，以抛光任何合适的衬底，例如在半导体工业中使用的多晶硅晶片。

    Composition for tungsten CMP
    4.
    发明授权
    Composition for tungsten CMP 有权
    钨CMP的组成

    公开(公告)号：US09238754B2

    公开(公告)日：2016-01-19

    申请号：US14203621

    申请日：2014-03-11

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Lin Fu ,  William Ward ,  Glenn Whitener

    IPC: C09G1/02 ,  H01L21/306 ,  H01L21/321

    CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

    CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity
    5.
    发明授权
    CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity 有权
    CMP组合物选择性优于多晶硅上的氧化物和具有高去除率和低缺陷率的氮化物

    公开(公告)号：US09165489B2

    公开(公告)日：2015-10-20

    申请号：US14289728

    申请日：2014-05-29

    Applicant: Cabot Microelectronics Corporation

    Inventor： Tina Li ,  Kevin Dockery ,  Renhe Jia ,  Jeffrey Dysard

    IPC: C09K13/00 ,  G09G1/02 ,  H01L21/3105 ,  C09K3/14

    CPC classification number: G09G1/02 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

    Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

    Abstract translation: 本发明提供一种含有二氧化铈研磨剂和式I的聚合物的化学机械抛光组合物：其中X1和X2，Y1和Y2，Z1和Z2，R1，R2，R3和R4以及m如本文所定义， 水，其中所述抛光组合物具有约1至约4.5的pH。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。

    CHEMICAL-MECHANICAL PLANARIZATION OF POLYMER FILMS
    6.
    发明申请
    CHEMICAL-MECHANICAL PLANARIZATION OF POLYMER FILMS 有权
    聚合物膜的化学机械平面化

    公开(公告)号：US20150083689A1

    公开(公告)日：2015-03-26

    申请号：US14035037

    申请日：2013-09-24

    Applicant: Cabot Microelectronics Corporation

    Inventor： Sudeep PALLIKKARA KUTTIATOOR ,  Renhe Jia ,  Jeffrey Dysard

    IPC: C09G1/02 ,  B24B1/00 ,  C09G1/04

    CPC classification number: C09G1/02 ,  C09D5/00

    Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.

    Abstract translation: 本发明提供化学机械抛光组合物和用化学机械抛光组合物对基材进行化学机械研磨的方法。 抛光组合物包含（a）包含二氧化铈，氧化锆，二氧化硅，氧化铝或其组合的磨料颗粒，（b）作为路易斯酸的金属离子，（c）作为芳族羧酸的配体，芳族 磺酸，芳香酸酰胺，氨基酸或羟基取代的N-杂环，和（d）水性载体，其中化学机械抛光组合物的pH在约1至约4的范围内。

    Chemical-mechanical planarization of polymer films
    8.
    发明授权
    Chemical-mechanical planarization of polymer films 有权
    聚合物膜的化学机械平面化

    公开(公告)号：US09434859B2

    公开(公告)日：2016-09-06

    申请号：US14035037

    申请日：2013-09-24

    Applicant: Cabot Microelectronics Corporation

    Inventor： Sudeep Pallikkara Kuttiatoor ,  Renhe Jia ,  Jeffrey Dysard

    IPC: C09G1/02 ,  B24B1/00

    CPC classification number: C09G1/02 ,  C09D5/00

    Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.

    Abstract translation: 本发明提供化学机械抛光组合物和用化学机械抛光组合物对基材进行化学机械研磨的方法。 抛光组合物包含（a）包含二氧化铈，氧化锆，二氧化硅，氧化铝或其组合的磨料颗粒，（b）作为路易斯酸的金属离子，（c）作为芳族羧酸的配体，芳族 磺酸，芳香酸酰胺，氨基酸或羟基取代的N-杂环，和（d）水性载体，其中化学机械抛光组合物的pH在约1至约4的范围内。

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