Invention Grant
- Patent Title: Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device
- Patent Title (中): 杂质扩散法，基板处理装置以及半导体装置的制造方法
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Application No.: US13871297Application Date: 2013-04-26
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Publication No.: US08906792B2Publication Date: 2014-12-09
- Inventor: Kazuya Takahashi , Yoshikazu Furusawa , Mitsuhiro Okada
- Applicant: Tokyo Electron Limited
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2012-103767 20120427
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/223 ; H01L21/28
Abstract:
The impurity diffusion method includes: transferring an object on which the thin film is formed into a processing chamber (operation 1); raising a temperature of the object to a vapor diffusion temperature in the processing chamber (operation 3); and supplying an impurity-containing gas that contains the impurities into the processing chamber, together with an inert gas and diffusing the impurities in the thin film formed on the object of which the temperature is raised to the vapor diffusion temperature (operation 4), wherein in the operation 4, an impurity diffusion acceleration gas for accelerating the diffusion of the impurities into the thin film is supplied into the processing chamber, together with the impurity-containing gas and the inert gas.
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