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1.发明授权公开(公告)号：US09758865B2
公开(公告)日：2017-09-12
申请号：US14447060
申请日：2014-07-30
发明人： Kazuhide Hasebe , Kazuya Takahashi , Katsuhiko Komori , Yoshikazu Furusawa , Mitsuhiro Okada , Hiroyuki Hayashi , Akinobu Kakimoto
IPC分类号： C23C16/00 , C23C16/04 , C23C16/24 , H01L21/285 , H01L21/3205 , H01L21/768
CPC分类号： C23C16/045 , C23C16/24 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.
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2.发明授权公开(公告)号：US09540743B2
公开(公告)日：2017-01-10
申请号：US14566069
申请日：2014-12-10
CPC分类号： C30B1/023 , C30B29/06 , C30B29/54 , Y10T117/10
摘要： There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.
摘要翻译： 提供了一种使非晶硅结晶的方法，其包括：在衬底膜上形成第二非晶硅膜的层叠结构，然后形成第一非晶硅膜，第二非晶硅膜的晶体生长速度比第一非晶硅薄膜高 硅膜; 对所述层叠结构进行结晶化处理，使至少含有所述第二非晶硅膜的硅氧烷结晶化。
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公开(公告)号：US09478423B2
公开(公告)日：2016-10-25
申请号：US13954472
申请日：2013-07-30
IPC分类号： H01L21/223 , H01L21/324 , H01L21/322 , H01L21/22 , H01L21/67
CPC分类号： H01L21/22 , H01L21/223 , H01L21/67109
摘要： A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.
摘要翻译： 提供了使用虚设基板将杂质气相扩散到待加工对象基板的扩散区域的方法。 该方法包括将目标衬底和虚拟衬底加载到衬底装载夹具中，将装载有目标衬底和虚设衬底的衬底装载夹具容纳在处理装置的处理室中，并将杂质蒸发扩散到 处理室中的目标衬底具有容纳衬底加载夹具。 蒸气扩散的杂质是硼，虚拟衬底的外表面包括具有不允许硼吸附的特性的材料。
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公开(公告)号：US10573518B2
公开(公告)日：2020-02-25
申请号：US15933760
申请日：2018-03-23
发明人： Yoshikazu Furusawa
摘要： A method of performing a film formation on target substrates in a state where a substrate holder for holding the target substrates in a shelf shape is loaded into a vertical reaction container from a lower opening thereof and the lower opening is closed by a lid. The method includes: performing the film formation on the target substrates by supplying a processing gas into the reaction container; opening the lid and unloading the substrate holder from the reaction container; performing the film formation on a bottom portion of the reaction container including an inner surface of the lid by closing the lower opening with the lid and supplying a coating gas different from the processing gas into the reaction container; and performing the film formation on the target substrates by opening the lid, loading the substrate holder into the reaction container, and supplying the processing gas into the reaction container.
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公开(公告)号：US09171722B2
公开(公告)日：2015-10-27
申请号：US13954472
申请日：2013-07-30
IPC分类号： H01L21/22 , H01L21/223 , H01L21/67
摘要： A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.
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6.发明授权Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device 有权杂质扩散法，基板处理装置以及半导体装置的制造方法公开(公告)号：US08906792B2
公开(公告)日：2014-12-09
申请号：US13871297
申请日：2013-04-26
IPC分类号： H01L21/22 , H01L21/223 , H01L21/28
CPC分类号： H01L21/2236 , H01L21/28035
摘要： The impurity diffusion method includes: transferring an object on which the thin film is formed into a processing chamber (operation 1); raising a temperature of the object to a vapor diffusion temperature in the processing chamber (operation 3); and supplying an impurity-containing gas that contains the impurities into the processing chamber, together with an inert gas and diffusing the impurities in the thin film formed on the object of which the temperature is raised to the vapor diffusion temperature (operation 4), wherein in the operation 4, an impurity diffusion acceleration gas for accelerating the diffusion of the impurities into the thin film is supplied into the processing chamber, together with the impurity-containing gas and the inert gas.
摘要翻译： 杂质扩散方法包括：将形成有薄膜的物体转印到处理室中（操作1）; 将物体的温度升高到处理室中的蒸气扩散温度（操作3）; 并将含有杂质的含杂质的气体与惰性气体一起供给到处理室中，并将形成在温度升高对象物上的薄膜中的杂质扩散到蒸气扩散温度（操作4），其中 在操作4中，用于加速杂质扩散到薄膜中的杂质扩散加速气体与含杂质气体和惰性气体一起被供应到处理室中。
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