Invention Grant
- Patent Title: Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers
- Patent Title (中): 安全处理低能量，高剂量砷，磷和硼植入晶片
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Application No.: US14275408Application Date: 2014-05-12
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Publication No.: US08927400B2Publication Date: 2015-01-06
- Inventor: Majeed A. Foad , Manoj Vellaikal , Kartik Santhanam
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/30 ; H01J37/32 ; H01L21/02 ; H01L21/223 ; H01L21/316
Abstract:
A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.
Public/Granted literature
- US20140248759A1 SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS Public/Granted day:2014-09-04
Information query
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