公开(公告)号：US11735447B2

公开(公告)日：2023-08-22

申请号：US17075321

申请日：2020-10-20

Applicant: Applied Materials, Inc.

Inventor： Kartik Santhanam ,  Kartik Shah ,  Wolfgang Aderhold ,  Martin Hilkene ,  Stephen Moffatt

IPC: H01L21/67 ,  G05B19/406 ,  G06N20/00

CPC classification number: H01L21/67276 ,  G05B19/406 ,  G06N20/00 ,  G05B2219/45031

Abstract: Embodiments disclosed herein include a processing tool for semiconductor processing. In an embodiment, the processing tool comprises a chamber, and a plurality of witness sensors integrated with the chamber. In an embodiment, the processing tool further comprises a drift detection module. In an embodiment, data from the plurality of witness sensors is provided to the drift detection module as input data. In an embodiment, the processing tool further comprises a dashboard for displaying output data from the drift detection module.

公开(公告)号：USD959490S1

公开(公告)日：2022-08-02

申请号：US29754188

申请日：2020-10-07

Applicant: Applied Materials, Inc.

Designer： Kartik Bhupendra Shah ,  Kartik Santhanam ,  Bindusagar Marath Sankarathodi ,  Abhilash J. Mayur ,  Dayal Ramachandran ,  Amritha Rammohan ,  Stephen Moffatt ,  Eugene Lobanov

公开(公告)号：US08927400B2

公开(公告)日：2015-01-06

申请号：US14275408

申请日：2014-05-12

Applicant: Applied Materials, Inc.

Inventor： Majeed A. Foad ,  Manoj Vellaikal ,  Kartik Santhanam

IPC: H01L21/70 ,  H01L21/30 ,  H01J37/32 ,  H01L21/02 ,  H01L21/223 ,  H01L21/316

CPC classification number: H01L21/3003 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/2236 ,  H01L21/31662

Abstract: A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

Abstract translation: 公开了一种在注入工艺之后防止有毒气体形成的方法。 某些掺杂剂当植入设置在基材上的薄膜时，当暴露于水分时可能发生反应，形成有毒气体和/或可燃气体。 通过将掺杂的膜原位暴露于含氧化合物，浅层注入层堆叠的掺杂剂反应形成掺杂剂氧化物，从而减少潜在的有毒气体和/或可燃气体的形成。 或者，可以在植入膜上原位形成覆盖层以减少有毒气体和/或可燃气体的潜在产生。

公开(公告)号：US20220122865A1

公开(公告)日：2022-04-21

申请号：US17075321

申请日：2020-10-20

Applicant: Applied Materials, Inc.

Inventor： Kartik Santhanam ,  Kartik Shah ,  Wolfgang Aderhold ,  Martin Hilkene ,  Stephen Moffatt

IPC: H01L21/67 ,  G06N20/00 ,  G05B19/406

Abstract: Embodiments disclosed herein include a processing tool for semiconductor processing. In an embodiment, the processing tool comprises a chamber, and a plurality of witness sensors integrated with the chamber. In an embodiment, the processing tool further comprises a drift detection module. In an embodiment, data from the plurality of witness sensors is provided to the drift detection module as input data. In an embodiment, the processing tool further comprises a dashboard for displaying output data from the drift detection module.