公开(公告)号：US11087979B2

公开(公告)日：2021-08-10

申请号：US16266485

申请日：2019-02-04

Applicant: Applied Materials, Inc.

Inventor： Christopher S. Olsen ,  Peter Stone ,  Teng-fang Kuo ,  Ping Han Hsieh ,  Manoj Vellaikal

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US10199221B2

公开(公告)日：2019-02-05

申请号：US15853397

申请日：2017-12-22

Applicant: Applied Materials, Inc.

Inventor： Christopher S. Olsen ,  Peter Stone ,  Teng-fang Kuo ,  Ping Han Hsieh ,  Manoj Vellaikal

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US09870921B2

公开(公告)日：2018-01-16

申请号：US15259489

申请日：2016-09-08

Applicant: Applied Materials, Inc.

Inventor： Christopher S. Olsen ,  Peter Stone ,  Teng-fang Kuo ,  Ping Han Hsieh ,  Manoj Vellaikal

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/02658 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68742

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

公开(公告)号：US20230307506A1

公开(公告)日：2023-09-28

申请号：US18121718

申请日：2023-03-15

Applicant: Applied Materials, Inc.

Inventor： Nicolas Breil ,  Matthew Cogorno ,  Anchuan Wang ,  Byeong Chan Lee ,  Manoj Vellaikal

IPC: H01L29/40 ,  H01L21/3065 ,  C23C16/24 ,  C23C16/56 ,  C23C16/52

CPC classification number: H01L29/401 ,  H01L21/3065 ,  C23C16/24 ,  C23C16/56 ,  C23C16/52 ,  H01L29/45

Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises non-selectively depositing an amorphous silicon layer on a top surface and a sidewall surface of at least one contact trench on a substrate and a crystalline silicon layer on a bottom surface of the at least one contact trench at a temperature less than or equal to 400° C., the bottom surface including a source/drain material. The amorphous silicon layer is selectively removed from the top surface and the sidewall surface at a temperature less than or equal to 400° C. The method may be performed in a processing chamber without breaking vacuum.

公开(公告)号：US20220375751A1

公开(公告)日：2022-11-24

申请号：US17463966

申请日：2021-09-01

Applicant: Applied Materials, Inc.

Inventor： Yi-Chiau HUANG ,  Songjae Lee ,  Manoj Vellaikal ,  Chen-Ying Wu ,  Eric Davey ,  Saurabh Chopra

IPC: H01L21/02 ,  C30B25/18 ,  C23C16/02 ,  C23C16/54

Abstract: Embodiments of the present disclosure generally relate to an integrated substrate processing system for cleaning a substrate surface and subsequently performing an epitaxial deposition process thereon. A processing system includes a film formation chamber, a transfer chamber coupled to the film formation chamber, and an oxide removal chamber coupled to the transfer chamber, the oxide removal chamber having a substrate support. The processing system includes a controller configured to introduce a process gas mixture into the oxide removal chamber, the process gas mixture including a fluorine-containing gas and a vapor including at least one of water, an alcohol, an organic acid, or combinations thereof. The controller is configured to expose a substrate positioned on the substrate support to the process gas mixture, thereby removing an oxide film from the substrate.

公开(公告)号：US08927400B2

公开(公告)日：2015-01-06

申请号：US14275408

申请日：2014-05-12

Applicant: Applied Materials, Inc.

Inventor： Majeed A. Foad ,  Manoj Vellaikal ,  Kartik Santhanam

IPC: H01L21/70 ,  H01L21/30 ,  H01J37/32 ,  H01L21/02 ,  H01L21/223 ,  H01L21/316

CPC classification number: H01L21/3003 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/2236 ,  H01L21/31662

Abstract: A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

Abstract translation: 公开了一种在注入工艺之后防止有毒气体形成的方法。 某些掺杂剂当植入设置在基材上的薄膜时，当暴露于水分时可能发生反应，形成有毒气体和/或可燃气体。 通过将掺杂的膜原位暴露于含氧化合物，浅层注入层堆叠的掺杂剂反应形成掺杂剂氧化物，从而减少潜在的有毒气体和/或可燃气体的形成。 或者，可以在植入膜上原位形成覆盖层以减少有毒气体和/或可燃气体的潜在产生。