- 专利标题: Hybrid photoresist composition and pattern forming method using thereof
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申请号: US13293672申请日: 2011-11-10
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公开(公告)号: US08932796B2公开(公告)日: 2015-01-13
- 发明人: Kuang-Jung Chen , Wu-Song S. Huang , Sen Liu , Steven J. Holmes , Gregory Breyta
- 申请人: Kuang-Jung Chen , Wu-Song S. Huang , Sen Liu , Steven J. Holmes , Gregory Breyta
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Steven Kellner; Yuanmin Cai
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; G03F7/20 ; G03F7/028 ; G03F7/038 ; G03F7/039 ; G03F7/095
摘要:
The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.
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