Techniques for organizing and presenting deal content
    1.
    发明授权
    Techniques for organizing and presenting deal content 有权
    组织和呈现交易内容的技术

    公开(公告)号:US09384502B2

    公开(公告)日:2016-07-05

    申请号:US13814714

    申请日:2012-06-29

    Abstract: Techniques for organizing and presenting deals/commercial offers received by users in emails are provided. Emails directed to a user that contain commercial offers for the user are determined. The determined emails are stored in a deal folder for the user. A deal newsletter is generated that at least summarizes commercial offers contained in at least a portion of the emails stored in the deal folder. The deal folder may be displayed to show the user the received deal emails. Furthermore, the deal newsletter may be displayed to the user to summarize the received deals for the user.

    Abstract translation: 提供用于组织和呈现用户在电子邮件中收到的交易/商业广告的技术。 确定指向用户的电子邮件,其中包含用户的商业报价。 确定的电子邮件存储在用户的交易文件夹中。 生成交易通讯,至少总结包含在交易文件夹中存储的至少一部分电子邮件中的商业优惠。 可以显示交易文件夹以向用户显示接收到的交易电子邮件。 此外,可以向用户显示交易通讯以总结用户接收到的交易。

    DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS FOR NEGATIVE RESISTS
    4.
    发明申请
    DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS FOR NEGATIVE RESISTS 有权
    可开发的底部抗反射涂层组合物

    公开(公告)号:US20130040238A1

    公开(公告)日:2013-02-14

    申请号:US13206796

    申请日:2011-08-10

    CPC classification number: G03F7/0382 C09J133/14 G03F7/091 G03F7/094 G03F7/095

    Abstract: A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist and the NDBARC layer become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.

    Abstract translation: 负显影底部抗反射涂层(NDBARC)材料包括含有脂族醇部分,芳族部分和羧酸部分的聚合物。 NDBARC组合物在涂布和烘烤后不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯(PGMEA)。 NDBARC材料还包括光致酸发生剂和任选的交联化合物。 在NDBARC材料中,羧酸提供了显影剂的溶解度,而单独的醇,单独的羧酸或它们的组合提供了PGMEA的抗性。 NDBARC材料对抗蚀剂溶剂具有抗性,因此在NDBARC的抗蚀涂层期间,NDBARC和抗蚀剂之间不会发生混合。 在曝光和烘烤之后,由于在光刻曝光部分中的负光刻胶和NDBARC层中的聚合物的化学扩展交联,负光致抗蚀剂和NDBARC层的光刻曝光部分变得不溶于显影剂。

    Multiple exposure photolithography methods and photoresist compositions
    8.
    发明授权
    Multiple exposure photolithography methods and photoresist compositions 有权
    多重曝光光刻方法和光致抗蚀剂组合物

    公开(公告)号:US08236476B2

    公开(公告)日:2012-08-07

    申请号:US11970761

    申请日:2008-01-08

    Abstract: A method and a composition are provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.

    Abstract translation: 提供了一种方法和组合物。 组合物包括聚合物和感光酸产生剂,其能够在暴露于第一剂量的辐射时产生第一量的酸,并且在暴露于第二剂量的辐射时能够产生第二量的酸。 第二量的酸大于所述第一量的酸。 第二剂量大于第一剂量。 所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂,以及暴露于第二剂量时第二量的碱,其中第一量的碱大于第一量的酸, 碱的第二量少于第二量的酸。 包括用于在基板上暴露于光致抗蚀剂的膜的方法。

    Surface treatment of metal interconnect lines
    9.
    发明授权
    Surface treatment of metal interconnect lines 有权
    金属互连线的表面处理

    公开(公告)号:US08053894B2

    公开(公告)日:2011-11-08

    申请号:US11213238

    申请日:2005-08-26

    Abstract: Apparatus for forming a semiconductor structure comprising a first layer on top of a substrate wherein the first layer defines conductive regions such as copper interconnect lines and non-conductive regions such as dielectric materials. The conductive regions are covered by a second layer of a material different than the first layer such as for example nickel and then the structure is heat treated such that the interconnect lines and second metal, such as a copper interconnect line and a nickel second layer, interact with each other to form an alloy layer. The alloy layer has superior qualities for adhering to both the copper interconnect lines and a subsequently deposited dielectric material.

    Abstract translation: 用于形成半导体结构的装置,其包括在衬底的顶部上的第一层,其中第一层限定诸如铜互连线和非导电区域(例如介电材料)的导电区域。 导电区域被不同于第一层的材料的第二层(例如镍)覆盖,然后对该结构进行热处理,使得互连线和第二金属(例如铜互连线和镍第二层) 相互作用形成合金层。 合金层具有优异的粘附于铜互连线和随后沉积的电介质材料的品质。

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