发明授权
- 专利标题： Large diamond crystal substrates and methods for producing the same
- 专利标题（中）： 大型金刚石晶体基板及其制造方法
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申请号： US12646163申请日： 2009-12-23
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公开(公告)号： US08940266B2公开(公告)日： 2015-01-27
- 发明人: Hideaki Yamada , Akiyoshi Chayahara , Yoshiaki Mokuno , Shinichi Shikata
- 申请人： Hideaki Yamada , Akiyoshi Chayahara , Yoshiaki Mokuno , Shinichi Shikata
- 申请人地址： JP Tokyo
- 专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2008-328987 20081225
- 主分类号： B01J3/06
- IPC分类号： B01J3/06 ; C30B33/06 ; C30B23/00 ; B01J19/08 ; C23C14/00 ; C30B29/04 ; C30B33/00 ; C01B31/06 ; C30B25/00
摘要：
The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate.According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.
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