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    Method of producing single crystal
    1.
    发明授权
    Method of producing single crystal 有权
    生产单晶的方法

    公开(公告)号：US07736435B2

    公开(公告)日：2010-06-15

    申请号：US11274148

    申请日：2005-11-16

    Applicant: Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Yuji Horino ,  Naoji Fujimori

    Inventor： Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Yuji Horino ,  Naoji Fujimori

    IPC: C30B25/02

    CPC classification number: C30B25/20 ,  C30B7/005 ,  C30B29/04 ,  Y10S117/902

    Abstract: A method for producing a single crystals by preferential epitaxial growth of {100} face, comprising the steps of (1) growing the crystal on a single crystal {100} substrate; (2) forming on the side of the grown crystal a surface parallel to a {100} face different from the {100}face in the growth direction, and (3) growing the crystal on the formed {100} surface; and the steps (2) and (3) being performed once or more than once. A method for producing a single-crystal diamond using a metallic holder for the single-crystal diamond having a crystal holding portion which is raised above an outer peripheral portion of the holder, is part from the outer peripheral portion of the holder, and has a recessed shape. The methods enable the production of a large single-crystal diamond in a comparatively short time at low cost.

    Abstract translation: 一种通过{100}面的优先外延生长来生产单晶的方法，包括以下步骤：（1）在单晶{100}衬底上生长晶体; （2）在生长晶体的侧面上形成平行于生长方向上与{100}面不同的{100}面的表面，和（3）在所形成的{100}表面上生长晶体; 并且步骤（2）和（3）执行一次或多于一次。 使用具有在保持器的外周部上方升起的晶体保持部的具有用于单晶金刚石的金属保持器制造单晶金刚石的方法是从保持器的外周部分开始的，并且具有 凹陷形状。 该方法能够在较短的时间内以低成本生产大型单晶金刚石。

    PROCESS FOR PRODUCING SINGLE-CRYSTAL SUBSTRATE WITH OFF ANGLE
    2.
    发明申请
    PROCESS FOR PRODUCING SINGLE-CRYSTAL SUBSTRATE WITH OFF ANGLE 审中-公开
    用于生产具有角度的单晶衬底的工艺

    公开(公告)号：US20090308305A1

    公开(公告)日：2009-12-17

    申请号：US12375175

    申请日：2007-07-20

    Applicant: Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Hideaki Yamada ,  Shinichi Shikata

    Inventor： Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Hideaki Yamada ,  Shinichi Shikata

    IPC: C30B23/00

    CPC classification number: C30B29/04 ,  C30B25/00 ,  C30B25/02 ,  C30B31/22 ,  C30B33/00 ,  H01L21/02376 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664

    Abstract: The invention provides a process for producing a single-crystal substrate with an off-angle, which comprises using, as a substrate, a material capable of epitaxial growth by a vapor-phase synthesis method, whose surface has an off-angle with respect to a crystal plane capable of epitaxial growth; implanting ions into the substrate having a surface with an off-angle to form a layer with a deteriorated crystal structure near the surface of the substrate; growing a crystal on the surface with an off-angle of the substrate by a vapor-phase synthesis method; and separating a grown crystal layer from the substrate. In accordance with the process of the invention, when producing off-substrates usable in vapor-phase synthesis of single crystals, the manufacturing costs can be reduced, and substrates with an identical off-angle can be produced easily and in large quantities.

    Abstract translation: 本发明提供一种用于制造具有偏角的单晶衬底的方法，该方法包括使用通过气相合成方法能够外延生长的材料作为衬底，其表面相对于 能够外延生长的晶体平面; 将离子注入具有偏离角的表面的衬底中以在衬底的表面附近形成具有劣化晶体结构的层; 通过气相合成法在衬底的偏角下在表面上生长晶体; 以及从衬底分离生长的晶体层。 根据本发明的方法，当制造可用于单晶合成气相的脱模底板时，可以降低制造成本，并且可以容易且大量地制造具有相同偏角的基板。

    METHOD FOR PRODUCING MOSAIC DIAMOND
    3.
    发明申请
    METHOD FOR PRODUCING MOSAIC DIAMOND 审中-公开
    生产金刚石钻石的方法

    公开(公告)号：US20120302045A1

    公开(公告)日：2012-11-29

    申请号：US13515991

    申请日：2010-12-15

    Applicant: Hideaki Yamada ,  Akiyoshi Chayahara ,  Yoshiaki Mokuno ,  Shinichi Shikata

    Inventor： Hideaki Yamada ,  Akiyoshi Chayahara ,  Yoshiaki Mokuno ,  Shinichi Shikata

    IPC: H01L21/20

    CPC classification number: C30B29/04 ,  C23C14/0605 ,  C23C14/48 ,  C23C14/5873 ,  C23C16/274 ,  C30B25/105 ,  C30B25/186

    Abstract: The present invention discloses a method for producing a mosaic diamond comprising implanting ions in the vicinity of the surfaces of a plurality of single-crystal diamond substrates arranged in the form of a mosaic, or in the vicinity of the surfaces of mosaic single-crystal diamond substrates whose back surfaces are bonded by a single-crystal diamond layer, so as to form non-diamond layers; growing a single-crystal diamond layer by a vapor-phase synthesis method; and separating the single-crystal diamond layer above the non-diamond layers by etching the non-diamond layers. The method of the present invention prevents the destruction of single-crystal diamond substrates by using a process that is simpler than conventional methods, thus allowing a large quantity of mosaic diamond to be produced in a stable and efficient manner.

    Abstract translation: 本发明公开了一种马赛克金刚石的制造方法，其特征在于，在离散镶嵌单体结构的多个单晶金刚石基板的表面附近，或马赛克单晶金刚石的表面附近， 其背面通过单晶金刚石层结合以形成非金刚石层的基板; 通过气相合成法生长单晶金刚石层; 以及通过蚀刻非金刚石层来分离非金刚石层上方的单晶金刚石层。 本发明的方法通过使用比常规方法简单的方法来防止单晶金刚石基板的破坏，因此允许以稳定和有效的方式生产大量的镶嵌金刚石。

    Method for separating surface layer or growth layer of diamond
    5.
    发明授权
    Method for separating surface layer or growth layer of diamond 有权
    分离金刚石表面层或生长层的方法

    公开(公告)号：US09410241B2

    公开(公告)日：2016-08-09

    申请号：US12439887

    申请日：2007-08-31

    Applicant: Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Hideaki Yamada

    Inventor： Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Hideaki Yamada

    IPC: C23C16/01 ,  C23C16/27 ,  C23C16/56 ,  C25F3/00 ,  C30B29/04 ,  C30B31/22 ,  C30B33/06

    CPC classification number: C23C16/01 ,  C23C16/27 ,  C23C16/56 ,  C25F3/00 ,  C30B29/04 ,  C30B31/22 ,  C30B33/06

    Abstract: The present invention provides a method for separating a surface layer of a diamond, which comprises implanting ions into a diamond to form a non-diamond layer near a surface of the diamond; and etching the non-diamond layer in the diamond by applying an alternating-current voltage across electrodes in an electrolytic solution; and a method for separating a grown layer of a diamond, which further comprises the step of growing a diamond by a vapor-phase synthesis method, after forming a non-diamond layer according to the above-described method. The invention is applicable to various single-crystal and polycrystal diamonds. More specifically, even with a large single-crystal diamond, a portion of the single-crystal diamond can be efficiently separated in a reusable form in a relatively short period of time.

    Abstract translation: 本发明提供一种用于分离金刚石的表面层的方法，其包括将离子注入金刚石以在金刚石的表面附近形成非金刚石层; 以及通过在电解液中跨越电极施加交流电压来蚀刻金刚石中的非金刚石层; 以及分离金刚石生长层的方法，其还包括根据上述方法在形成非金刚石层之后通过气相合成法生长金刚石的步骤。 本发明适用于各种单晶和多晶钻石。 更具体地，即使使用大的单晶金刚石，一部分单晶金刚石可以在相对较短的时间内以可重复使用的形式被有效地分离。

    METHOD FOR SEPARATING SURFACE LAYER OR GROWTH LAYER OF DIAMOND
    7.
    发明申请
    METHOD FOR SEPARATING SURFACE LAYER OR GROWTH LAYER OF DIAMOND 有权
    用于分离钻石表面层或生长层的方法

    公开(公告)号：US20100206217A1

    公开(公告)日：2010-08-19

    申请号：US12439887

    申请日：2007-08-31

    Applicant: Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Hideaki Yamada

    Inventor： Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Hideaki Yamada

    IPC: C30B25/00 ,  C25F3/02

    CPC classification number: C23C16/01 ,  C23C16/27 ,  C23C16/56 ,  C25F3/00 ,  C30B29/04 ,  C30B31/22 ,  C30B33/06

    Abstract: The present invention provides a method for separating a surface layer of a diamond, which comprises implanting ions into a diamond to form a non-diamond layer near a surface of the diamond; and etching the non-diamond layer in the diamond by applying an alternating-current voltage across electrodes in an electrolytic solution; and a method for separating a grown layer of a diamond, which further comprises the step of growing a diamond by a vapor-phase synthesis method, after forming a non-diamond layer according to the above-described method.The invention is applicable to various single-crystal and polycrystal diamonds. More specifically, even with a large single-crystal diamond, a portion of the single-crystal diamond can be efficiently separated in a reusable form in a relatively short period of time.

    Abstract translation: 本发明提供一种用于分离金刚石的表面层的方法，其包括将离子注入金刚石以在金刚石的表面附近形成非金刚石层; 以及通过在电解液中跨越电极施加交流电压来蚀刻金刚石中的非金刚石层; 以及分离金刚石生长层的方法，其还包括根据上述方法在形成非金刚石层之后通过气相合成法生长金刚石的步骤。 本发明适用于各种单晶和多晶钻石。 更具体地，即使使用大的单晶金刚石，一部分单晶金刚石可以在相对较短的时间内以可重复使用的形式被有效地分离。

    LARGE DIAMOND CRYSTAL SUBSTRATES AND METHODS FOR PRODUCING THE SAME
    8.
    发明申请
    LARGE DIAMOND CRYSTAL SUBSTRATES AND METHODS FOR PRODUCING THE SAME 有权
    大型金刚石晶体基板及其制造方法

    公开(公告)号：US20100166636A1

    公开(公告)日：2010-07-01

    申请号：US12646163

    申请日：2009-12-23

    Applicant: Hideaki Yamada ,  Akiyoshi Chayahara ,  Yoshiaki Mokuno ,  Shinichi Shikata

    Inventor： Hideaki Yamada ,  Akiyoshi Chayahara ,  Yoshiaki Mokuno ,  Shinichi Shikata

    IPC: C01B31/06 ,  C30B33/06

    CPC classification number: C30B29/04 ,  C01B32/25 ,  C01B32/28 ,  C30B23/00 ,  C30B25/00 ,  C30B33/00 ,  C30B33/06

    Abstract: The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate.According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.

    Abstract translation: 本发明提供一种用于制造大型单晶金刚石基板的方法，包括以下步骤：制备从相同的母基板分离的多个单晶金刚石层，将单晶金刚石层以马赛克图案放置在 平面支撑，并通过气相合成法在单晶金刚石层的与母体基底分离的面上生长单晶金刚石。 根据本发明的方法，可以相对容易地制造面积大，质量好的马赛克单晶金刚石。

    REMOVAL METHOD OF SURFACE DAMAGE OF SINGLE CRYSTAL DIAMOND
    9.
    发明申请
    REMOVAL METHOD OF SURFACE DAMAGE OF SINGLE CRYSTAL DIAMOND 审中-公开
    单晶金刚石表面损伤的去除方法

    公开(公告)号：US20100000967A1

    公开(公告)日：2010-01-07

    申请号：US12336841

    申请日：2008-12-17

    Applicant: Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Hideaki Yamada

    Inventor： Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Hideaki Yamada

    IPC: B44C1/22

    CPC classification number: H01L21/0405

    Abstract: The present invention provides a process for removing surface damage of a single-crystal diamond, which comprises implanting ions into a single-crystal diamond to form a non-diamond layer near a surface of the diamond, graphitizing the non-diamond layer, and removing a surface layer by etching. According to the invention, the surface damage can be removed or reduced without increasing the surface roughness of a single crystal diamond.

    Abstract translation: 本发明提供一种去除单晶金刚石的表面损伤的方法，其包括将离子注入到单晶金刚石中以在金刚石的表面附近形成非金刚石层，使非金刚石层石墨化，并除去 通过蚀刻表面层。 根据本发明，可以除去或减少表面损伤，而不增加单晶金刚石的表面粗糙度。

    Method of producing single crystal
    10.
    发明申请
    Method of producing single crystal 有权
    生产单晶的方法

    公开(公告)号：US20060266279A1

    公开(公告)日：2006-11-30

    申请号：US11274148

    申请日：2005-11-16

    Applicant: Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Yuji Horino ,  Naoji Fujimori

    Inventor： Yoshiaki Mokuno ,  Akiyoshi Chayahara ,  Yuji Horino ,  Naoji Fujimori

    IPC: C30B7/00 ,  C30B21/02 ,  C30B28/06

    CPC classification number: C30B25/20 ,  C30B7/005 ,  C30B29/04 ,  Y10S117/902

    Abstract: The present invention provides a method for producing a single crystals by preferential epitaxial growth of {100} face, the method comprising the steps of (1) growing the crystal on a single crystal {100} substrate; (2) forming on the side of the grown crystal a surface parallel to a {100} face different from the {100} face in the growth direction, and (3) growing the crystal on the formed {100} surface; and the steps (2) and (3) being performed once or more than once. The present invention further provides a method for producing a single-crystal diamond wherein used is a metallic holder for the single-crystal diamond having a crystal holding portion which is raised above an outer peripheral portion of the holder, is apart from the outer peripheral portion of the holder, and has a recessed shape. According to the present invention, a method for producing a single crystal by epitaxial growth, in particular a method for producing a single-crystal diamond using gaseous phase synthetic methods enable the production of a large single-crystal diamond in a comparatively short time at low cost.

    Abstract translation: 本发明提供了通过{100}面的优先外延生长来制造单晶的方法，该方法包括以下步骤：（1）在单晶{100}衬底上生长晶体; （2）在生长晶体的侧面上形成平行于生长方向上与{100}面不同的{100}面的表面，和（3）在所形成的{100}表面上生长晶体; 并且步骤（2）和（3）执行一次或多于一次。 本发明还提供一种用于制造单晶金刚石的方法，其中使用的是具有晶体保持部分的单晶金刚石的金属保持器，所述晶体保持部分在保持器的外周部分上方升高，与外周部分 并具有凹陷形状。 根据本发明，通过外延生长制造单晶的方法，特别是使用气相合成方法制造单晶金刚石的方法使得能够在较短时间内生产大型单晶金刚石 成本。

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