Invention Grant
US08961815B2 Composition for advanced node front-and back-end of line chemical mechanical polishing
有权
用于线性化学机械抛光的高级节点前端和后端的组成
- Patent Title: Composition for advanced node front-and back-end of line chemical mechanical polishing
- Patent Title (中): 用于线性化学机械抛光的高级节点前端和后端的组成
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Application No.: US12828766Application Date: 2010-07-01
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Publication No.: US08961815B2Publication Date: 2015-02-24
- Inventor: Bin Hu , Abhiskek Singh , Gert Moyaerts , Deepak Mahulikar , Richard Wen
- Applicant: Bin Hu , Abhiskek Singh , Gert Moyaerts , Deepak Mahulikar , Richard Wen
- Applicant Address: US MI Adrian
- Assignee: Planar Solutions, LLC
- Current Assignee: Planar Solutions, LLC
- Current Assignee Address: US MI Adrian
- Agency: Ohlandt, Greeley, Ruggiero & Perle, LLP
- Main IPC: C09K13/04
- IPC: C09K13/04 ; C09K3/14 ; C09G1/02 ; H01L21/3105 ; H01L21/321 ; H01L21/768 ; H01L29/66
Abstract:
The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
Public/Granted literature
- US20120003901A1 COMPOSITION FOR ADVANCED NODE FRONT-AND BACK-END OF LINE CHEMICAL MECHANICAL POLISHING Public/Granted day:2012-01-05
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