Invention Grant
US08968668B2 Arrays of metal and metal oxide microplasma devices with defect free oxide
有权
具有缺陷氧化物的金属和金属氧化物微质体装置阵列
- Patent Title: Arrays of metal and metal oxide microplasma devices with defect free oxide
- Patent Title (中): 具有缺陷氧化物的金属和金属氧化物微质体装置阵列
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Application No.: US13527842Application Date: 2012-06-20
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Publication No.: US08968668B2Publication Date: 2015-03-03
- Inventor: J. Gary Eden , Sung-Jin Park , Jin Hoon Cho , Seung Hoon Sung , Min Hwan Kim
- Applicant: J. Gary Eden , Sung-Jin Park , Jin Hoon Cho , Seung Hoon Sung , Min Hwan Kim
- Applicant Address: US IL Urbana
- Assignee: The Board of Trustees of the University of Illinois
- Current Assignee: The Board of Trustees of the University of Illinois
- Current Assignee Address: US IL Urbana
- Agency: Greer, Burns & Crain, Ltd.
- Main IPC: B01J19/08
- IPC: B01J19/08 ; H01J37/32 ; C25D11/02 ; H01J11/18 ; C25D11/12 ; C25D11/18 ; C25D11/26 ; H01J17/16

Abstract:
A microplasma device of the invention includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel upon application of suitable voltage and at least one of the electrodes is encapsulated within the thick metal oxide layer. Large arrays can be formed and are highly robust as lack of microcracks in the oxide avoid dielectric breakdown.
Public/Granted literature
- US20130071297A1 ARRAYS OF METAL AND METAL OXIDE MICROPLASMA DEVICES WITH DEFECT FREE OXIDE Public/Granted day:2013-03-21
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