发明授权
- 专利标题： Apparatus for supporting substrate and plasma etching apparatus having the same
- 专利标题（中）： 用于支撑基板的等离子体蚀刻装置
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申请号： US12531068申请日： 2008-04-01
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公开(公告)号： US08980049B2公开(公告)日： 2015-03-17
- 发明人: Won Haeng Lee , Kwan Goo Rha , Jung Hee Lee , Chul Hee Jang , Hyang Joo Lee , Dong Wan Kim
- 申请人： Won Haeng Lee , Kwan Goo Rha , Jung Hee Lee , Chul Hee Jang , Hyang Joo Lee , Dong Wan Kim
- 申请人地址： KR
- 专利权人： Charm Engineering Co., Ltd.
- 当前专利权人： Charm Engineering Co., Ltd.
- 当前专利权人地址： KR
- 优先权： KR10-2007-0032301 20070402; KR10-2007-0043146 20070503; KR10-2007-0047179 20070515
- 国际申请： PCT/KR2008/001824 WO 20080401
- 国际公布： WO2008/120946 WO 20081009
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; H01L21/306 ; H01L21/67 ; H01L21/683 ; H01L21/687
摘要：
Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.
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