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公开(公告)号：US20180146918A1
公开(公告)日：2018-05-31
申请号：US15819915
申请日：2017-11-21
发明人： Kwang Moo Kim , Seung Kyun Hong , Sang Woo Choi , Kyu Hong Lee
IPC分类号： A61B5/00 , A61B5/1455
CPC分类号： A61B5/4821 , A61B5/0476 , A61B5/14552 , A61B5/14553 , A61B5/6814 , A61B5/6831 , A61B5/6832
摘要： Provided is an integrated depth-of-anesthesia/cerebral-oxygen-saturation detection sensor. Particularly, the depth-of-anesthesia/cerebral-oxygen-saturation detection sensor includes a strap and a sensing unit that is arranged on the strap, and sensing unit includes a depth-of-anesthesia sensor and a cerebral oxygen saturation sensor that are arranged on the same plane. Therefore, it is possible to simultaneously measure a depth of anesthesia and cerebral oxygen saturation with a single detection sensor, so that it is possible to reduce cost.
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2.发明授权公开(公告)号：US08980049B2
公开(公告)日：2015-03-17
申请号：US12531068
申请日：2008-04-01
申请人： Won Haeng Lee , Kwan Goo Rha , Jung Hee Lee , Chul Hee Jang , Hyang Joo Lee , Dong Wan Kim
发明人： Won Haeng Lee , Kwan Goo Rha , Jung Hee Lee , Chul Hee Jang , Hyang Joo Lee , Dong Wan Kim
IPC分类号： C23C16/00 , H01L21/306 , H01L21/67 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67069 , H01L21/6831 , H01L21/68742
摘要： Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.
摘要翻译： 提供了一种基板支撑装置和具有该基板支撑装置的等离子体蚀刻装置。 提供了一种基板支撑装置，其可以通过在基板支撑装置的中心区域设置支撑基板的电极，并且在该基板支撑装置的中心区域设置接收射频（RF）电力的电极， 边缘区域。 提供了一种基板边缘蚀刻装置，其具有用于去除沉积在半导体基板的边缘区域中的层或颗粒的基板支撑装置，并且防止在基板边缘的蚀刻处理期间对半导体基板的中心区域的损坏。
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3.发明申请公开(公告)号：US20140251540A1
公开(公告)日：2014-09-11
申请号：US14204541
申请日：2014-03-11
发明人： Young-Soo SEO , Young-Ki HAN , Jun-Hyeok LEE , Kyu-Sang LEE
IPC分类号： H01J37/32
CPC分类号： H01J37/32715 , C23C16/45565 , C23C16/5096 , H01J37/3244 , H01J37/32724
摘要： Provided is a substrate processing apparatus including a chamber provided with a reaction space and formed with an exhaustion opening in a center of a bottom, a substrate supporter provided in the chamber and supporting a substrate, a gas injection assembly provided to be opposite to the substrate supporter, injecting a processing gas, and generating plasma thereof, and an exhauster connected to the exhaustion opening and provided below the chamber to exhaust an inside of the chamber, in which the substrate supporter includes a substrate support supporting the substrate and a plurality of supporting posts supporting an outside of the substrate support disposing the exhausting opening therebetween.
摘要翻译： 本发明提供一种基板处理装置，其具备设置有反应空间的室，在底部的中心形成有排气开口，在该室内设置有支撑基板的基板支撑体，与该基板相对设置的气体注入组件 支撑体，注入处理气体和产生等离子体;以及排气器，其与排气口连接并设置在室下方以排出室内部，其中基板支撑件包括支撑基板的基板支撑件和多个支撑件 支撑在衬底支撑体外部的柱，其间设有排气口。
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公开(公告)号：US20100288728A1
公开(公告)日：2010-11-18
申请号：US12810915
申请日：2008-12-10
申请人： Young Ki Han , Young Soo Seo
发明人： Young Ki Han , Young Soo Seo
CPC分类号： H01J37/20 , H01J37/3244 , H01J37/32449 , H01J2237/2002 , H01J2237/20235
摘要： There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.
摘要翻译： 提供了一种用于处理基板的装置和方法。 通过使用该装置和方法，可以在单个室中对基板的边缘区域和后部区域各自进行等离子体处理。 该装置包括提供反应空间的室; 安装在室内的舞台; 等离子体屏蔽单元，其安装在所述室中与所述台相对; 支撑单元，用于在所述载物台和所述等离子体屏蔽单元之间支撑基板; 设置在所述阶段以将反应或非反应气体供应到所述基板的一个表面的第一供给管; 以及设置在所述等离子体屏蔽单元处的第二和第三供应管，所述第二供应管向所述基板的另一表面供应反应气体，所述第三供应管向另一表面供应非反应气体。
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公开(公告)号：US20110024399A1
公开(公告)日：2011-02-03
申请号：US12936671
申请日：2009-04-06
申请人： Hyoung Won Kim , Young Soo Seo , Chi Kug Yoon , Jun Hyeok Lee , Young Ki Han , Jae Chul Choi
发明人： Hyoung Won Kim , Young Soo Seo , Chi Kug Yoon , Jun Hyeok Lee , Young Ki Han , Jae Chul Choi
IPC分类号： B23K10/00
CPC分类号： H01J37/32568 , H01J37/32009 , H01J2237/334 , H01L21/67069 , H01L21/67751 , H01L21/68742
摘要： Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.
摘要翻译： 提供了一种等离子体处理装置和方法。 等离子体处理装置包括室，上电极，下电极，基板支撑件和移动构件。 上电极设置在室的内部上部。 下电极在室的内下部面对上电极以支撑衬底，使得衬底的斜面在衬底级蚀刻工艺中暴露。 衬底支撑件设置在上电极和下电极之间以支撑衬底，使得衬底的底表面的中心区域在衬底背面蚀刻工艺中暴露。 移动构件被构造成移动衬底支撑件以在衬底背面蚀刻工艺中将衬底与衬底支撑件分离。
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公开(公告)号：US08888950B2
公开(公告)日：2014-11-18
申请号：US12528326
申请日：2008-03-13
申请人： Kyung Ho Lee , Jae Ho Guahk , Jae Chul Choi , Young Ki Han , Hee Se Lee , Yong Hwan Lim , Kwan Goo Rha , Seng Hyun Chung , Sun Q Jeon , Jung Hee Lee
发明人： Kyung Ho Lee , Jae Ho Guahk , Jae Chul Choi , Young Ki Han , Hee Se Lee , Yong Hwan Lim , Kwan Goo Rha , Seng Hyun Chung , Sun Q Jeon , Jung Hee Lee
IPC分类号： C23F1/00 , H01L21/306 , H01L21/687 , H01J37/32 , H01L21/67 , H01L21/02
CPC分类号： H01L21/67069 , H01J37/32431 , H01J2237/20 , H01L21/0209 , H01L21/68735 , H01L21/68742
摘要： There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.
摘要翻译： 提供了一种能够可靠地支撑诸如其上形成有预定薄膜图案的装置的基板的基板的基板支撑件，以去除形成在基板的后表面上的各种杂质，以及具有该基板的等离子体处理装置。 等离子体处理装置包括：至少一个臂; 以及从臂朝向基板的基板安置位置延伸的支撑部，使得与常规干蚀刻相比，等离子体处理装置可以减少电弧放电的可能性，以提高工艺成品率和产品可靠性，并且确保基板的稳定安装 。
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公开(公告)号：US08864936B2
公开(公告)日：2014-10-21
申请号：US12810915
申请日：2008-12-10
申请人： Young Ki Han , Young Soo Seo
发明人： Young Ki Han , Young Soo Seo
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H01J37/20 , H01J37/32
CPC分类号： H01J37/20 , H01J37/3244 , H01J37/32449 , H01J2237/2002 , H01J2237/20235
摘要： There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.
摘要翻译： 提供了一种用于处理基板的装置和方法。 通过使用该装置和方法，可以在单个室中对基板的边缘区域和后部区域各自进行等离子体处理。 该装置包括提供反应空间的室; 安装在室内的舞台; 等离子体屏蔽单元，其安装在所述室中与所述台相对; 支撑单元，用于在所述载物台和所述等离子体屏蔽单元之间支撑基板; 设置在所述阶段以将反应或非反应气体供应到所述基板的一个表面的第一供给管; 以及设置在所述等离子体屏蔽单元处的第二和第三供应管，所述第二供应管向所述基板的另一表面供应反应气体，所述第三供应管向另一表面供应非反应气体。
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公开(公告)号：US08373086B2
公开(公告)日：2013-02-12
申请号：US12936671
申请日：2009-04-06
申请人： Hyoung Won Kim , Young Soo Seo , Chi Kug Yoon , Jun Hyeok Lee , Young Ki Han , Jae Chul Choi
发明人： Hyoung Won Kim , Young Soo Seo , Chi Kug Yoon , Jun Hyeok Lee , Young Ki Han , Jae Chul Choi
IPC分类号： B23K10/00
CPC分类号： H01J37/32568 , H01J37/32009 , H01J2237/334 , H01L21/67069 , H01L21/67751 , H01L21/68742
摘要： Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.
摘要翻译： 提供了一种等离子体处理装置和方法。 等离子体处理装置包括室，上电极，下电极，基板支撑件和移动构件。 上电极设置在室的内部上部。 下电极在室的内下部面对上电极以支撑衬底，使得衬底的斜面在衬底级蚀刻工艺中暴露。 衬底支撑件设置在上电极和下电极之间以支撑衬底，使得衬底的底表面的中心区域在衬底背面蚀刻工艺中暴露。 移动构件被构造成移动衬底支撑件以在衬底背面蚀刻工艺中将衬底与衬底支撑件分离。
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9.发明申请SUBSTRATE HOLDER, SUBSTRATE SUPPORTING APPARATUS, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD USING THE SAME 审中-公开基板保持器，基板支撑装置，基板处理装置和使用该基板的基板处理方法公开(公告)号：US20110049100A1
公开(公告)日：2011-03-03
申请号：US12863388
申请日：2009-01-15
申请人： Young Ki Han , Young Soo Seo , Hyoung Won Kim , Chi Kug Yoon , Sang Hoon Lee
发明人： Young Ki Han , Young Soo Seo , Hyoung Won Kim , Chi Kug Yoon , Sang Hoon Lee
CPC分类号： H01J37/32715 , H01J37/3244 , H01J37/32568 , H01J37/32623 , H01J37/32642 , H01J2237/3343 , H01L21/67069 , H01L21/68721 , H01L21/68728 , H01L21/68785
摘要： Provided are a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method. Particularly, there are provided a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method that are adapted to improve process efficiency and etch uniformity at the back surface of a substrate.
摘要翻译： 提供了基板保持器，基板支撑装置，基板处理装置和基板处理方法。 特别地，提供了适于提高基板背面的工艺效率和蚀刻均匀性的基板保持器，基板支撑装置，基板处理装置和基板处理方法。
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