公开(公告)号：US08980049B2

公开(公告)日：2015-03-17

申请号：US12531068

申请日：2008-04-01

申请人： Won Haeng Lee ,  Kwan Goo Rha ,  Jung Hee Lee ,  Chul Hee Jang ,  Hyang Joo Lee ,  Dong Wan Kim

发明人： Won Haeng Lee ,  Kwan Goo Rha ,  Jung Hee Lee ,  Chul Hee Jang ,  Hyang Joo Lee ,  Dong Wan Kim

IPC分类号： C23C16/00 ,  H01L21/306 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01L21/67069 ,  H01L21/6831 ,  H01L21/68742

摘要： Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.

摘要翻译： 提供了一种基板支撑装置和具有该基板支撑装置的等离子体蚀刻装置。 提供了一种基板支撑装置，其可以通过在基板支撑装置的中心区域设置支撑基板的电极，并且在该基板支撑装置的中心区域设置接收射频（RF）电力的电极， 边缘区域。 提供了一种基板边缘蚀刻装置，其具有用于去除沉积在半导体基板的边缘区域中的层或颗粒的基板支撑装置，并且防止在基板边缘的蚀刻处理期间对半导体基板的中心区域的损坏。

公开(公告)号：US20100096084A1

公开(公告)日：2010-04-22

申请号：US12531068

申请日：2008-04-01

申请人： Won Haeng Lee ,  Kwan Goo Rha ,  Jung Hee Lee ,  Chul Hee Jang ,  Hyang Joo Lee ,  Dong Wan Kim

发明人： Won Haeng Lee ,  Kwan Goo Rha ,  Jung Hee Lee ,  Chul Hee Jang ,  Hyang Joo Lee ,  Dong Wan Kim

IPC分类号： C23F1/08

CPC分类号： H01L21/67069 ,  H01L21/6831 ,  H01L21/68742

摘要： Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.

摘要翻译： 提供了一种基板支撑装置和具有该基板支撑装置的等离子体蚀刻装置。 提供了一种基板支撑装置，其可以通过在基板支撑装置的中心区域设置支撑基板的电极，并且在该基板支撑装置的中心区域设置接收射频（RF）电力的电极， 边缘区域。 提供了一种基板边缘蚀刻装置，其具有用于去除沉积在半导体基板的边缘区域中的层或颗粒的基板支撑装置，并且防止在基板边缘的蚀刻处理期间对半导体基板的中心区域的损坏。