Invention Grant
- Patent Title: Semiconductor magnetic field sensors
- Patent Title (中): 半导体磁场传感器
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Application No.: US14108106Application Date: 2013-12-16
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Publication No.: US08981442B2Publication Date: 2015-03-17
- Inventor: Victor Zieren , Anco Heringa , Olaf Wunnicke , Jan Slotboom , Robert Hendrikus Margaretha van Veldhoven , Jan Claes
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP12198395 20121220
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; G01R33/06 ; H01L29/735 ; H01L29/861

Abstract:
A semiconductor magnetic field sensor comprising a semiconductor well on top of a substrate layer is disclosed. The semiconductor well includes a first current collecting region and a second current collecting region and a current emitting region placed between the first current collecting region and the second current collecting region. The semiconductor well also includes a first MOS structure, having a first gate terminal, located between the first current collecting region and the current emitting region and a second MOS structure, having a second gate terminal, located between the current emitting region and the second current collecting region. In operation, the first gate terminal and the second gate terminal are biased for increasing a deflection length of a first current and of a second current. The deflection length is perpendicular to a plane defined by a surface of the semiconductor magnetic field sensor and parallel to a magnetic field.
Public/Granted literature
- US20140175528A1 SEMICONDUCTOR MAGNETIC FIELD SENSORS Public/Granted day:2014-06-26
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