发明授权
US08982602B2 Memory devices, circuits and, methods that apply different electrical conditions in access operations
有权
存储器件，电路和在接入操作中应用不同电气条件的方法
- 专利标题： Memory devices, circuits and, methods that apply different electrical conditions in access operations
- 专利标题（中）： 存储器件，电路和在接入操作中应用不同电气条件的方法
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申请号： US13600144申请日： 2012-08-30
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公开(公告)号： US08982602B2公开(公告)日： 2015-03-17
- 发明人: Ravi Sunkavalli , Malcolm Wing
- 申请人： Ravi Sunkavalli , Malcolm Wing
- 申请人地址： US CA Sunnyvale
- 专利权人： Adesto Technologies Corporation
- 当前专利权人： Adesto Technologies Corporation
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; G11C7/00 ; G11C7/10 ; G11C7/12 ; G11C7/22 ; G11C11/419 ; G11C11/56 ; G11C7/08 ; G11C11/16 ; G11C16/26
摘要：
A memory device can include a plurality of memory elements programmable between different impedance states; and circuits configured to apply first electrical conditions to one group of memory elements and second electrical conditions, different from the first electrical conditions, to another group of memory elements to vary a speed of an access operation to the different groups of memory elements.
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