摘要:
A memory device can include a plurality of memory elements programmable between different impedance states; and circuits configured to apply first electrical conditions to one group of memory elements and second electrical conditions, different from the first electrical conditions, to another group of memory elements to vary a speed of an access operation to the different groups of memory elements.
摘要:
A memory device can include a plurality of physical blocks that each include a number of memory elements programmable between at least two different impedance states, the memory elements being subject to degradation in performance; and bias circuits configured to applying healing electrical conditions to at least one spare physical block that does not contain valid data; wherein the healing electrical conditions are different from write operation electrical conditions, and reverse degradation of the memory elements of the at least one spare physical block.
摘要:
A memory system can include a plurality of memory elements each comprising a memory layer having at least one layer programmable between at least two different impedance states; a data input configured to receive multi-bit write data values; and a permutation circuit coupled between the memory elements and the data input, and configured to repeatedly permute the multi-bit write data values prior to writing such data values into the memory elements.
摘要:
A memory device can include a plurality of memory elements programmable between different impedance states; and circuits configured to apply first electrical conditions to one group of memory elements and second electrical conditions, different from the first electrical conditions, to another group of memory elements to vary a speed of an access operation to the different groups of memory elements.
摘要:
A memory device can include a plurality of physical blocks that each include a number of memory elements programmable between at least two different impedance states, the memory elements being subject to degradation in performance; and bias circuits configured to applying healing electrical conditions to at least one spare physical block that does not contain valid data; wherein the healing electrical conditions are different from write operation electrical conditions, and reverse degradation of the memory elements of the at least one spare physical block.
摘要:
A memory device can include at least two ports for transferring data to and from the memory device; and plurality of memory cells, each memory cell including at least one element programmable between different impedance states, and a plurality of access devices, each access device providing a current path between the element and a different one of the ports.
摘要:
Methods, systems, and circuits for forming and operating a global hierarchical clock tree are described. The global hierarchical clock tree may comprise a clock circuit that operates to provide clock signals to a core circuit surrounded by the clock circuit. The clock circuit may include two or more first and second clock generator modules to generate a first and a second set of clock signals, respectively. The first and second clock modules may be located so that the first set of clock signals experience approximately equal first latencies and the second set of clock signals experience approximately equal second latencies. Additional methods, systems, and circuits are disclosed.
摘要:
Logic design apparatus and method provides serial multiplexer chains in a programmable logic fabric, each element in the chain either selects output of block, or passes output from earlier element of the chain. Select line is a decoder structure or output from configurable function generator that is configured at power-on to create correct selection. Using such structure, larger multiplexer, including priority multiplexers, tristate buses or larger look-up tables (LUTs) can be created. These novel structures can implement priority, non-priority or tristate multiplexers.
摘要:
A dedicated logic cell in a programmable logic structure is described that comprises the following primary components: a configurable logic function or look-up table (LL), a dedicated logic function (DL), a sequential logic function (LS), and a control logic function (LC). In this illustration, the dedicated logic cell comprises two configurable logic functions, two sequential logic functions, a dedicate logic function, and a control logic function. In a first embodiment, the dedicated logic cell is constructed with a combination of configurable logic functions that are coupled to a dedicated logic function in order to perform a four 2-input function, an AND function, an OR function, or an XOR function. In a second embodiment, the dedicated logic cell is constructed with a combination of configurable logic functions that are coupled to a dedicated logic function in order to perform a four 2-to-1 multiplexer function. In a third embodiment, the dedicated logic cell is constructed with a plurality of configurable logic functions that operate as a two 6-input function with separate inputs. In a fourth embodiment, the dedicated logic cell is constructed with a combination of a configurable logic function with sequential logic functions that operate as a loadable, resettable, clearable shift register. In a fifth embodiment, the dedicated logic cell is constructed with a combination of configurable logic functions, a dedicated logic function, and sequential logic functions that operate as an accumulator.
摘要:
A programmable logic structure is disclosed employing input logic routing cell (ILRC) multiplexers and output logic routing cell (OLRC) multiplexers for making local connections between dedicated logic cells. In a simple programmable logic structure, a dedicated logic cell (DLC) is implemented in a programmable logic structure comprising multiple ILRC multiplexers for port A and multiple OLRC multiplexers for port B. In a multi-level programmable logic structure, multiple columns of dedicated logic cells is designed with columns of dedicated local cells adjacent to each other where each DLC column is used to implement a particular logic function. In a first embodiment, local connections can be made between dedicated logic cells, e.g. an OLRC in a first DLC at level L making local point-to-point connections to an ILRC in a second DLC at level L+1. In a second embodiment, local connections can be made from any other dedicated logic cells, whether positioned horizontally or vertically relative to a relative point or multiplexer, and from any offset from a current logic and routing cell (LRC). In a third embodiment, local connections can be made by stitching a first OLRC to a second OLRC (for connecting to an ILRC), which allows lines from other columns or levels of DLC to reach an ILRC for a fast local interconnect.