Invention Grant
- Patent Title: Substrateless power device packages
- Patent Title (中): 无层无源功率器件封装
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Application No.: US12916086Application Date: 2010-10-29
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Publication No.: US08987878B2Publication Date: 2015-03-24
- Inventor: Tao Feng , Zhiqiang Niu , Yuping Gong , Ruisheng Wu , Ping Huang , Lei Shi , Yueh-Se Ho
- Applicant: Tao Feng , Zhiqiang Niu , Yuping Gong , Ruisheng Wu , Ping Huang , Lei Shi , Yueh-Se Ho
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/683 ; H01L21/56 ; H01L23/31 ; H01L23/48 ; H01L23/00 ; H01L29/06
Abstract:
A substrate-less composite power semiconductor device may include a thin substrate and a top metal layer located on a top surface of the substrate. A total thickness of the substrate and the epitaxial layer may be less than 25 microns. Solder bumps are formed on top of the top metal layer and molding compound surrounds the solder bumps and leaves the solder bumps at least partly exposed.
Public/Granted literature
- US20120104580A1 SUBSTRATELESS POWER DEVICE PACKAGES Public/Granted day:2012-05-03
Information query
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