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    PACKAGING METHOD OF MOLDED WAFER LEVEL CHIP SCALE PACKAGE (WLCSP)
    3.
    发明申请
    PACKAGING METHOD OF MOLDED WAFER LEVEL CHIP SCALE PACKAGE (WLCSP) 有权
    模压水平切片尺寸包装（WLCSP）的包装方法

    公开(公告)号：US20130210195A1

    公开(公告)日：2013-08-15

    申请号：US13547358

    申请日：2012-07-12

    申请人： Yan Xun Xue ,  Hamza Yilmaz ,  Yueh-Se Ho ,  Jun Lu ,  Ping Huang ,  Lei Shi ,  Lei Duan ,  Yuping Gong

    发明人： Yan Xun Xue ,  Hamza Yilmaz ,  Yueh-Se Ho ,  Jun Lu ,  Ping Huang ,  Lei Shi ,  Lei Duan ,  Yuping Gong

    IPC分类号： H01L21/78

    CPC分类号： H01L21/563 ,  H01L23/3157 ,  H01L2224/73104 ,  H01L2224/83191 ,  H01L2924/13091 ,  H01L2924/00

    摘要： A WLCSP method comprises: depositing a metal bump on bonding pads of chips; forming a first packaging layer at front surface of wafer to cover metal bumps while forming an un-covered ring at the edge of wafer to expose the ends of each scribe line located between two adjacent chips; thinning first packaging layer to expose metal bumps; forming a groove on front surface of first packaging layer along each scribe line by cutting along a straight line extended by two ends of scribe line exposed on front surface of un-covered ring; grinding back surface of wafer to form a recessed space and a support ring at the edge of the wafer; depositing a metal layer at bottom surface of wafer in recessed space; cutting off the edge portion of wafer; and separating individual chips from wafer by cutting through first packaging layer, the wafer and metal layer along groove.

    摘要翻译： WLCSP方法包括：在芯片的焊盘上沉积金属凸块; 在晶片的前表面形成第一包装层以覆盖金属凸块，同时在晶片边缘形成未覆盖的环，以露出位于两个相邻芯片之间的每个划线的端部; 稀释第一包装层以暴露金属凸块; 通过沿着未被覆盖的环的前表面上暴露的划线的两端延伸的直线切割沿着每个划线在第一包装层的前表面上形成凹槽; 研磨晶片的后表面以在晶片的边缘处形成凹陷空间和支撑环; 在凹陷空间中在晶片的底面沉积金属层; 切断晶片的边缘部分; 以及通过沿着沟槽切割第一包装层，晶片和金属层，从晶片分离单个芯片。

    Packaging method of molded wafer level chip scale package (WLCSP)
    4.
    发明授权
    Packaging method of molded wafer level chip scale package (WLCSP) 有权
    模制晶圆级芯片级封装（WLCSP）的封装方法

    公开(公告)号：US08778735B1

    公开(公告)日：2014-07-15

    申请号：US13931854

    申请日：2013-06-29

    申请人： Yan Xun Xue ,  Hamza Yilmaz ,  Yueh-Se Ho ,  Jun Lu ,  Ping Huang ,  Lei Shi ,  Lei Duan ,  Yuping Gong

    发明人： Yan Xun Xue ,  Hamza Yilmaz ,  Yueh-Se Ho ,  Jun Lu ,  Ping Huang ,  Lei Shi ,  Lei Duan ,  Yuping Gong

    IPC分类号： H01L21/00 ,  H01L21/304 ,  H01L21/78

    CPC分类号： H01L21/304 ,  H01L21/561 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/27 ,  H01L2224/73104 ,  H01L2224/83191 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00

    摘要： A WLCSP method comprises: depositing a metal bump on bonding pads of chips; forming a first packaging layer at front surface of wafer to cover metal bumps while forming an un-covered ring at the edge of wafer to expose the ends of each scribe line located between two adjacent chips; thinning first packaging layer to expose metal bumps; forming a groove on front surface of first packaging layer along each scribe line by cutting along a straight line extended by two ends of scribe line exposed on front surface of un-covered ring; grinding back surface of wafer to form a recessed space and a support ring at the edge of the wafer; depositing a metal layer at bottom surface of wafer in recessed space; cutting off the edge portion of wafer; and separating individual chips from wafer by cutting through first packaging layer, the wafer and metal layer along groove.

    摘要翻译： WLCSP方法包括：在芯片的焊盘上沉积金属凸块; 在晶片的前表面形成第一包装层以覆盖金属凸块，同时在晶片边缘形成未覆盖的环，以露出位于两个相邻芯片之间的每个划线的端部; 稀释第一包装层以暴露金属凸块; 通过沿着未被覆盖的环的前表面上暴露的划线的两端延伸的直线切割沿着每个划线在第一包装层的前表面上形成凹槽; 研磨晶片的后表面以在晶片的边缘处形成凹陷空间和支撑环; 在凹陷空间中在晶片的底面沉积金属层; 切断晶片的边缘部分; 以及通过沿着沟槽切割第一包装层，晶片和金属层，从晶片分离单个芯片。

    Packaging method of molded wafer level chip scale package (WLCSP)
    5.
    发明授权
    Packaging method of molded wafer level chip scale package (WLCSP) 有权
    模制晶圆级芯片级封装（WLCSP）的封装方法

    公开(公告)号：US08563361B2

    公开(公告)日：2013-10-22

    申请号：US13547358

    申请日：2012-07-12

    申请人： Yan Xun Xue ,  Hamza Yilmaz ,  Yueh-Se Ho ,  Jun Lu ,  Ping Huang ,  Lei Shi ,  Lei Duan ,  Yuping Gong

    发明人： Yan Xun Xue ,  Hamza Yilmaz ,  Yueh-Se Ho ,  Jun Lu ,  Ping Huang ,  Lei Shi ,  Lei Duan ,  Yuping Gong

    IPC分类号： H01L21/00

    CPC分类号： H01L21/563 ,  H01L23/3157 ,  H01L2224/73104 ,  H01L2224/83191 ,  H01L2924/13091 ,  H01L2924/00

    摘要： A WLCSP method comprises: depositing a metal bump on bonding pads of chips; forming a first packaging layer at front surface of wafer to cover metal bumps while forming an un-covered ring at the edge of wafer to expose the ends of each scribe line located between two adjacent chips; thinning first packaging layer to expose metal bumps; forming a groove on front surface of first packaging layer along each scribe line by cutting along a straight line extended by two ends of scribe line exposed on front surface of un-covered ring; grinding back surface of wafer to form a recessed space and a support ring at the edge of the wafer; depositing a metal layer at bottom surface of wafer in recessed space; cutting off the edge portion of wafer; and separating individual chips from wafer by cutting through first packaging layer, the wafer and metal layer along groove.

    摘要翻译： WLCSP方法包括：在芯片的焊盘上沉积金属凸块; 在晶片的前表面形成第一包装层以覆盖金属凸块，同时在晶片边缘形成未覆盖的环，以露出位于两个相邻芯片之间的每个划线的端部; 稀释第一包装层以暴露金属凸块; 通过沿着未被覆盖的环的前表面上暴露的划线的两端延伸的直线切割沿着每个划线在第一包装层的前表面上形成凹槽; 研磨晶片的后表面以在晶片的边缘处形成凹陷空间和支撑环; 在凹陷空间中在晶片的底面沉积金属层; 切断晶片的边缘部分; 以及通过沿着沟槽切割第一包装层，晶片和金属层，从晶片分离单个芯片。

    WAFER LEVEL PACKAGING METHOD OF ENCAPSULATING THE BOTTOM AND SIDE OF A SEMICONDUCTOR CHIP
    7.
    发明申请
    WAFER LEVEL PACKAGING METHOD OF ENCAPSULATING THE BOTTOM AND SIDE OF A SEMICONDUCTOR CHIP 有权
    封装半导体芯片底部和底部的水平包装方法

    公开(公告)号：US20130095612A1

    公开(公告)日：2013-04-18

    申请号：US13273168

    申请日：2011-10-13

    申请人： Ping Huang ,  Ruisheng Wu ,  Lei Duan ,  Yi Chen ,  Yuping Gong

    发明人： Ping Huang ,  Ruisheng Wu ,  Lei Duan ,  Yi Chen ,  Yuping Gong

    IPC分类号： H01L21/82

    CPC分类号： H01L23/3171 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/02379 ,  H01L2224/12105 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00

    摘要： A chip-scale packaging method, with bottom and side of a semiconductor chip encapsulated, includes the following steps: attaching backside of a thinned semiconductor wafer to a dicing tape; separating individual chips by cutting from front side of the wafer at scribe line but not cut through the dicing tape; flipping and attaching the wafer onto a top surface of a double-sided tape, then removing the dicing tape; attaching bottom surface of the double-sided tape on a supporting plate; filling the space between adjacent chips and covering the whole wafer backside with a molding material; flipping the whole structure and remove the supporting plate; placing solder balls at corresponding positions on electrodes of each chip and performing backflow treatment; finally separating individual chip packages by cutting through molding material at the space between adjacent chip packages with molding material encapsulating the bottom and side of each individual semiconductor chip.

    摘要翻译： 封装了半导体芯片的底部和侧面的芯片级封装方法包括以下步骤：将薄化的半导体晶片的背面安装到切割带上; 通过在切割线处切割晶片的正面而不切割切割带来分离各个芯片; 翻转并将晶片连接到双面胶带的顶表面上，然后移除切割胶带; 将双面胶带的底面附着在支撑板上; 填充相邻芯片之间的空间并用模制材料覆盖整个晶片背面; 翻转整个结构并拆下支撑板; 将焊球放置在每个芯片的电极上的相应位置，并执行回流处理; 最后通过在封装每个单独的半导体芯片的底部和侧面的成型材料之间切割相邻芯片封装之间的空间处的模制材料来分离单个芯片封装。

    Wafer level packaging method of encapsulating the bottom and side of a semiconductor chip
    8.
    发明授权
    Wafer level packaging method of encapsulating the bottom and side of a semiconductor chip 有权
    封装半导体芯片的底部和侧面的晶片级封装方法

    公开(公告)号：US08486803B2

    公开(公告)日：2013-07-16

    申请号：US13273168

    申请日：2011-10-13

    申请人： Ping Huang ,  Ruisheng Wu ,  Lei Duan ,  Yi Chen ,  Yuping Gong

    发明人： Ping Huang ,  Ruisheng Wu ,  Lei Duan ,  Yi Chen ,  Yuping Gong

    IPC分类号： H01L21/30

    CPC分类号： H01L23/3171 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/02379 ,  H01L2224/12105 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00

    摘要： A chip-scale packaging method, with bottom and side of a semiconductor chip encapsulated, includes the following steps: attaching backside of a thinned semiconductor wafer to a dicing tape; separating individual chips by cutting from front side of the wafer at scribe line but not cut through the dicing tape; flipping and attaching the wafer onto a top surface of a double-sided tape, then removing the dicing tape; attaching bottom surface of the double-sided tape on a supporting plate; filling the space between adjacent chips and covering the whole wafer backside with a molding material; flipping the whole structure and remove the supporting plate; placing solder balls at corresponding positions on electrodes of each chip and performing backflow treatment; finally separating individual chip packages by cutting through molding material at the space between adjacent chip packages with molding material encapsulating the bottom and side of each individual semiconductor chip.

    摘要翻译： 封装了半导体芯片的底部和侧面的芯片级封装方法包括以下步骤：将薄化的半导体晶片的背面安装到切割带上; 通过在切割线处切割晶片的正面而不切割切割带来分离各个芯片; 翻转并将晶片连接到双面胶带的顶表面上，然后移除切割胶带; 将双面胶带的底面附着在支撑板上; 填充相邻芯片之间的空间并用模制材料覆盖整个晶片背面; 翻转整个结构并拆下支撑板; 将焊球放置在每个芯片的电极上的相应位置，并执行回流处理; 最后通过在封装每个单独的半导体芯片的底部和侧面的成型材料之间切割相邻芯片封装之间的空间处的模制材料来分离单个芯片封装。